Damage of silicon induced by low-energy Ar magnetron discharges

The physical damage induced in silicon by argon magnetron discharges has been studied. The surface trap density measured with the high-low frequency capacitance-voltage method was used to evaluate the degree of damage on the substrate. No damage is found for substrates sputter-etched in an RF discharge with 30 eV mean ion energy. Substrates sputter etched in 450 eV DC discharge show damage similar to that obtained in other glow discharge or ion milling systems with the same energy.