Damage of silicon induced by low-energy Ar magnetron discharges

F. Y. Chen, I. Lin, C. H. Lin

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


The physical damage induced in silicon by argon magnetron discharges has been studied. The surface trap density measured with the high-low frequency capacitance-voltage method was used to evaluate the degree of damage on the substrate. No damage is found for substrates sputter-etched in an RF discharge with 30 eV mean ion energy. Substrates sputter etched in 450 eV DC discharge show damage similar to that obtained in other glow discharge or ion milling systems with the same energy.

Original languageEnglish
Article number010
Pages (from-to)533-536
Number of pages4
JournalSemiconductor Science and Technology
Issue number8
StatePublished - 1987


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