Current-voltage and reverse recovery characteristics of bulk gan p-i-n rectifiers

Y. Irokawa, B. Luo, Jihyun Kim, J. R. LaRoche, F. Ren, K. H. Baik, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi, S. S. Park, Y. J. Park

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

A study was performed on current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers. It was found that the forward turn-on voltage displayed a positive temperature coefficient. The improved forward characteristics relative to previous heteroepitaxial p-i-n GaN rectifiers showed the advantages of using a GaN substrate.

Original languageEnglish
Pages (from-to)2271-2273
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number11
DOIs
StatePublished - 15 Sep 2003

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