Current transport of GaAsSb-based DHBTs with different emitter structures

Chun ting Pan, Che ming Wang, Yue ming Hsin, H. J. Zhu, J. M. Kuo, Y. C. Kao

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


In this study, we compare our InAlAs-InP/GaAsSb DHBT with other published GaAsSb-based DHBTs in the dc characteristics by examining the Gummel plot and simulation analysis. The InAlAs-InP and InP-InAlAs composite emitters can effectively reduce electron pile-up as found in the InP/GaAsSb DHBT, thus increasing current gain significantly at low current density. Although electron pile-up is found in the InP/GaAsSb DHBT from the type-II conduction band barrier, it shows better operation at the high current regime than composite emitter structures because at high bias the abrupt heterojunction formed at the InP-InAlAs interface blocks carriers and degrades the inject efficiency.

Original languageEnglish
Pages (from-to)574-577
Number of pages4
JournalSolid-State Electronics
Issue number6
StatePublished - Jun 2009


  • GaAsSb
  • InAlAs
  • InP
  • Type-II DHBT


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