Abstract
In this study, we compare our InAlAs-InP/GaAsSb DHBT with other published GaAsSb-based DHBTs in the dc characteristics by examining the Gummel plot and simulation analysis. The InAlAs-InP and InP-InAlAs composite emitters can effectively reduce electron pile-up as found in the InP/GaAsSb DHBT, thus increasing current gain significantly at low current density. Although electron pile-up is found in the InP/GaAsSb DHBT from the type-II conduction band barrier, it shows better operation at the high current regime than composite emitter structures because at high bias the abrupt heterojunction formed at the InP-InAlAs interface blocks carriers and degrades the inject efficiency.
Original language | English |
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Pages (from-to) | 574-577 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 53 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2009 |
Keywords
- GaAsSb
- InAlAs
- InP
- Type-II DHBT