Crystallographic Orientation Effect on Electromigration in Ni-Sn Microbump

Yi Ting Huang; Chih Hao Chen; Subhendu Chakroborty; Albert T. Wu

doi:10.1007/s11837-017-2457-9

Crystallographic Orientation Effect on Electromigration in Ni-Sn Microbump

Yi Ting Huang, Chih Hao Chen, Subhendu Chakroborty, Albert T. Wu

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

This article addresses the reliability challenges regarding electromigration in developing three-dimensional integrated circuits (3D-ICs). The line-type sandwich structure of Ni/Sn3.5Ag(15 μm)/Ni was used to simulate microbumps to examine the reliability of electromigration in 3D-IC technology. The solder strip of Ni/Sn3.5Ag(15 μm)/Ni was stressed with a current density of 1.0 × 10⁴ A/cm² at 150°C. The current stressing enhanced the reaction between the solder and Ni to form Ni₃Sn₄, which occupied the entire joint and transformed into a Ni/Ni₃Sn₄/Ni structure when the solder was completely consumed. Electron backscatter diffraction was used to analyze the crystallographic characteristics of Sn and Ni₃Sn₄ as related to the electromigration effect. The results indicated that the crystallographic orientation of Sn plays a significant role in the Ni/Sn3.5Ag/Ni, whereas the orientation of Ni₃Sn₄ is the dominant factor of diffusion behavior in the Ni/Ni₃Sn₄/Ni.

Original language	English
Pages (from-to)	1717-1723
Number of pages	7
Journal	JOM
Volume	69
Issue number	9
DOIs	https://doi.org/10.1007/s11837-017-2457-9
State	Published - 1 Sep 2017

Access to Document

10.1007/s11837-017-2457-9

Cite this

@article{eb1f1090b0b444a99ebebde4efa6a4f8,

title = "Crystallographic Orientation Effect on Electromigration in Ni-Sn Microbump",

abstract = "This article addresses the reliability challenges regarding electromigration in developing three-dimensional integrated circuits (3D-ICs). The line-type sandwich structure of Ni/Sn3.5Ag(15 μm)/Ni was used to simulate microbumps to examine the reliability of electromigration in 3D-IC technology. The solder strip of Ni/Sn3.5Ag(15 μm)/Ni was stressed with a current density of 1.0 × 104 A/cm2 at 150°C. The current stressing enhanced the reaction between the solder and Ni to form Ni3Sn4, which occupied the entire joint and transformed into a Ni/Ni3Sn4/Ni structure when the solder was completely consumed. Electron backscatter diffraction was used to analyze the crystallographic characteristics of Sn and Ni3Sn4 as related to the electromigration effect. The results indicated that the crystallographic orientation of Sn plays a significant role in the Ni/Sn3.5Ag/Ni, whereas the orientation of Ni3Sn4 is the dominant factor of diffusion behavior in the Ni/Ni3Sn4/Ni.",

author = "Huang, {Yi Ting} and Chen, {Chih Hao} and Subhendu Chakroborty and Wu, {Albert T.}",

note = "Publisher Copyright: {\textcopyright} 2017, The Minerals, Metals & Materials Society.",

year = "2017",

month = sep,

day = "1",

doi = "10.1007/s11837-017-2457-9",

language = "???core.languages.en_GB???",

volume = "69",

pages = "1717--1723",

journal = "JOM",

issn = "1047-4838",

number = "9",

}

TY - JOUR

T1 - Crystallographic Orientation Effect on Electromigration in Ni-Sn Microbump

AU - Huang, Yi Ting

AU - Chen, Chih Hao

AU - Chakroborty, Subhendu

AU - Wu, Albert T.

PY - 2017/9/1

Y1 - 2017/9/1

N2 - This article addresses the reliability challenges regarding electromigration in developing three-dimensional integrated circuits (3D-ICs). The line-type sandwich structure of Ni/Sn3.5Ag(15 μm)/Ni was used to simulate microbumps to examine the reliability of electromigration in 3D-IC technology. The solder strip of Ni/Sn3.5Ag(15 μm)/Ni was stressed with a current density of 1.0 × 104 A/cm2 at 150°C. The current stressing enhanced the reaction between the solder and Ni to form Ni3Sn4, which occupied the entire joint and transformed into a Ni/Ni3Sn4/Ni structure when the solder was completely consumed. Electron backscatter diffraction was used to analyze the crystallographic characteristics of Sn and Ni3Sn4 as related to the electromigration effect. The results indicated that the crystallographic orientation of Sn plays a significant role in the Ni/Sn3.5Ag/Ni, whereas the orientation of Ni3Sn4 is the dominant factor of diffusion behavior in the Ni/Ni3Sn4/Ni.

AB - This article addresses the reliability challenges regarding electromigration in developing three-dimensional integrated circuits (3D-ICs). The line-type sandwich structure of Ni/Sn3.5Ag(15 μm)/Ni was used to simulate microbumps to examine the reliability of electromigration in 3D-IC technology. The solder strip of Ni/Sn3.5Ag(15 μm)/Ni was stressed with a current density of 1.0 × 104 A/cm2 at 150°C. The current stressing enhanced the reaction between the solder and Ni to form Ni3Sn4, which occupied the entire joint and transformed into a Ni/Ni3Sn4/Ni structure when the solder was completely consumed. Electron backscatter diffraction was used to analyze the crystallographic characteristics of Sn and Ni3Sn4 as related to the electromigration effect. The results indicated that the crystallographic orientation of Sn plays a significant role in the Ni/Sn3.5Ag/Ni, whereas the orientation of Ni3Sn4 is the dominant factor of diffusion behavior in the Ni/Ni3Sn4/Ni.

UR - http://www.scopus.com/inward/record.url?scp=85024491583&partnerID=8YFLogxK

U2 - 10.1007/s11837-017-2457-9

DO - 10.1007/s11837-017-2457-9

M3 - 期刊論文

AN - SCOPUS:85024491583

SN - 1047-4838

VL - 69

SP - 1717

EP - 1723

JO - JOM

JF - JOM

IS - 9

ER -

Crystallographic Orientation Effect on Electromigration in Ni-Sn Microbump

Abstract

Access to Document

Fingerprint

Cite this