Crystallization in amorphous silicon

L. J. Chen, S. L. Cheng, H. H. Lin, K. S. Chi

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

High-resolution transmission electron microscopy (HRTEM) in conjunction with auto-correlation function (ACF) analysis has been applied to investigate the crystallization processes in amorphous silicon. For both electron beam evaporated and ion implanted amorphous silicon thin films, a high density of Si nanocrystallites was detected in as-deposited films. The density was found to diminish in amorphous films with annealing temperature first then increase. The conclusions are discussed in the context of free energy change with annealing temperature.

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalInternational Journal of Modern Physics B
Volume16
Issue number1-2
DOIs
StatePublished - 20 Jan 2002

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