Crystalline silicon interface passivation improvement with a-Si 1-xCx:H and its application in hetero-junction solar cells with intrinsic layer

Teng Hsiang Chang; Yen Ho Chu; Chien Chieh Lee; Jenq Yang Chang

doi:10.1063/1.4770308

Crystalline silicon interface passivation improvement with a-Si _1-xC_x:H and its application in hetero-junction solar cells with intrinsic layer

Teng Hsiang Chang, Yen Ho Chu, Chien Chieh Lee, Jenq Yang Chang

Optical Sciences Center

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Excellent passivation of an n-type Czochralski crystalline silicon surface is made possible by the deposition of hydrogenated silicon carbide (Si _1-xC_x:H) layers in the electron cyclotron resonance chemical vapor deposition. We investigate the structural effect with various CH₄/SiH₄ dilution ratios, and the lowest effective surface recombination velocity (21.03cm/s) that can be obtained. We also demonstrate that the V_oc can be improved more than 200mV by inserting Si _1-xC_x:H layers to form hetero-junction with intrinsic thin layer (HIT) solar cells. The conversion efficiency of the planar HIT solar cell with μc-Si emitter can reach 13%.

Original language	English
Article number	241601
Journal	Applied Physics Letters
Volume	101
Issue number	24
DOIs	https://doi.org/10.1063/1.4770308
State	Published - 10 Dec 2012

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title = "Crystalline silicon interface passivation improvement with a-Si 1-xCx:H and its application in hetero-junction solar cells with intrinsic layer",

abstract = "Excellent passivation of an n-type Czochralski crystalline silicon surface is made possible by the deposition of hydrogenated silicon carbide (Si 1-xCx:H) layers in the electron cyclotron resonance chemical vapor deposition. We investigate the structural effect with various CH4/SiH4 dilution ratios, and the lowest effective surface recombination velocity (21.03cm/s) that can be obtained. We also demonstrate that the Voc can be improved more than 200mV by inserting Si 1-xCx:H layers to form hetero-junction with intrinsic thin layer (HIT) solar cells. The conversion efficiency of the planar HIT solar cell with μc-Si emitter can reach 13%.",

author = "Chang, {Teng Hsiang} and Chu, {Yen Ho} and Lee, {Chien Chieh} and Chang, {Jenq Yang}",

note = "Funding Information: This work was supported by Grant Nos. NSC-100-2120-M-008-002 and NSC 101-2221-E-008-050 received from the National Science Council of Taiwan.",

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T1 - Crystalline silicon interface passivation improvement with a-Si 1-xCx:H and its application in hetero-junction solar cells with intrinsic layer

AU - Chang, Teng Hsiang

AU - Chu, Yen Ho

AU - Lee, Chien Chieh

AU - Chang, Jenq Yang

N1 - Funding Information: This work was supported by Grant Nos. NSC-100-2120-M-008-002 and NSC 101-2221-E-008-050 received from the National Science Council of Taiwan.

PY - 2012/12/10

Y1 - 2012/12/10

N2 - Excellent passivation of an n-type Czochralski crystalline silicon surface is made possible by the deposition of hydrogenated silicon carbide (Si 1-xCx:H) layers in the electron cyclotron resonance chemical vapor deposition. We investigate the structural effect with various CH4/SiH4 dilution ratios, and the lowest effective surface recombination velocity (21.03cm/s) that can be obtained. We also demonstrate that the Voc can be improved more than 200mV by inserting Si 1-xCx:H layers to form hetero-junction with intrinsic thin layer (HIT) solar cells. The conversion efficiency of the planar HIT solar cell with μc-Si emitter can reach 13%.

AB - Excellent passivation of an n-type Czochralski crystalline silicon surface is made possible by the deposition of hydrogenated silicon carbide (Si 1-xCx:H) layers in the electron cyclotron resonance chemical vapor deposition. We investigate the structural effect with various CH4/SiH4 dilution ratios, and the lowest effective surface recombination velocity (21.03cm/s) that can be obtained. We also demonstrate that the Voc can be improved more than 200mV by inserting Si 1-xCx:H layers to form hetero-junction with intrinsic thin layer (HIT) solar cells. The conversion efficiency of the planar HIT solar cell with μc-Si emitter can reach 13%.

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Crystalline silicon interface passivation improvement with a-Si 1-xCx:H and its application in hetero-junction solar cells with intrinsic layer

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Crystalline silicon interface passivation improvement with a-Si _1-xC_x:H and its application in hetero-junction solar cells with intrinsic layer