@article{6331a31c25754cd5bf4a398a80ab4e27,
title = "Crack-free GaN grown on AlGaN (111) Si micropillar array fabricated by polystyrene microsphere lithography",
abstract = "The authors report on the growth of GaN on AlGaN (111) Si micropillar array by metal-organic chemical vapor deposition. Using the substrates with micropillar array, 2-μm -thick GaN films without cracks can be achieved. Transmission electron microscopy, atomic force microscopy, and micro-Raman studies indicate that the dislocation density and residual stress of the GaN grown on micropillar array are also reduced. The results reveal the potential of this type of substrates for growing GaN-based devices as well as preparing GaN freestanding substrates.",
author = "Chen, {Guan Ting} and Chyi, {Jen Inn} and Chan, {Chia Hua} and Hou, {Chia Hung} and Chen, {Chii Chang} and Chang, {Mao Nan}",
note = "Funding Information: The authors would like to thank Mr. Hsiang-Szu Chang and Professor Tzu-Min Hsu for their asistance in micro-Raman measurements, and Dr. H. Y. Lin and Professor Y. F. Chen for the asistance in CL measurements. This work is partially supported by the National Science Council, R.O.C. under Contract Nos. NSC95-2221-E-008-116-MY3 and NSC96-2628-E-008-072-MY3.",
year = "2007",
doi = "10.1063/1.2828137",
language = "???core.languages.en_GB???",
volume = "91",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "26",
}