Co2-laser-assisted plasma-enhanced chemical vapor deposition of silicon dioxide thin film

Hung Sheng Tsai, Hsin Ching Chiu, Sheng Hsiung Chang, Chao Chia Cheng, Ching Ting Lee, Hai Pei Liu

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The plasma enhanced chemical vapor deposition (PECVD) of silicon dioxide (SiO2) thin films from SiH4 and N2O has been executed with and without CO2 laser illumination. The quality of the film processed under a 10.6 μm CO2 laser was close to that of a film grown when the substrate was heated to 200°C. Since the temperature of the film substrate under CO2 laser illumination was only about 55°C, this method should be helpful in processes where a low thermal budget is required. CO2-laser-assisted PECVD (termed LAPECVD) with a substrate heated to 200°C resulted in a SiO2 thin film with excellent I-V characteristics and surface morphology, as well as a higher refractive index and lower etching rate in BOE solution. Application of this thin film should be explored.

Original languageEnglish
Pages (from-to)3093-3095
Number of pages3
JournalJapanese Journal of Applied Physics
Volume40
Issue number5 A
DOIs
StatePublished - May 2001

Keywords

  • CO laser
  • PECVD
  • Silicon dioxide

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