Correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition of nanocrystalline silicon thin films

Li Han Kau; Hung Jui Huang; Hsueh Er Chang; Yu Lin Hsieh; Chien Chieh Lee; Yiin Kuen Fuh; Tomi T. Li

doi:10.3390/coatings9050305

Correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition of nanocrystalline silicon thin films

Li Han Kau, Hung Jui Huang, Hsueh Er Chang, Yu Lin Hsieh, Chien Chieh Lee, Yiin Kuen Fuh, Tomi T. Li

Research output: Contribution to journal › Article › peer-review

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Abstract

In this paper, the correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition (PECVD) was systematically investigated in SiH ₄ plasma diluted by various hydrogen dilution ratios. At the onset of nanocrystallinity in SiH _4- depleted plasma condition, the SiH ⁺ radical reached a threshold value as the dominant radical, such that a-Si to nc-Si transition was obtained. Furthermore, the experimental data of impedance analysis showed that matching behavior can be greatly influenced by variable plasma parameters due to the change of various hydrogen dilution ratios, which is consistent with the recorded optical emission spectra (OES) of Hα* radicals. Quadruple mass spectrometry (QMS) and transmission electron microscopy (TEM) were employed as associated diagnostic and characterization tools to confirm the phase transformation and existence of silicon nanocrystals.

Original language	English
Article number	305
Journal	Coatings
Volume	9
Issue number	5
DOIs	https://doi.org/10.3390/coatings9050305
State	Published - 1 May 2019

Keywords

Crystalline fraction
Crystallite size
Hydrogen dilution ratio
Impedance analysis
Nanocrystalline
Optical emission spectroscopy

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10.3390/coatings9050305

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title = "Correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition of nanocrystalline silicon thin films",

abstract = " In this paper, the correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition (PECVD) was systematically investigated in SiH 4 plasma diluted by various hydrogen dilution ratios. At the onset of nanocrystallinity in SiH 4- depleted plasma condition, the SiH + radical reached a threshold value as the dominant radical, such that a-Si to nc-Si transition was obtained. Furthermore, the experimental data of impedance analysis showed that matching behavior can be greatly influenced by variable plasma parameters due to the change of various hydrogen dilution ratios, which is consistent with the recorded optical emission spectra (OES) of Hα* radicals. Quadruple mass spectrometry (QMS) and transmission electron microscopy (TEM) were employed as associated diagnostic and characterization tools to confirm the phase transformation and existence of silicon nanocrystals.",

keywords = "Crystalline fraction, Crystallite size, Hydrogen dilution ratio, Impedance analysis, Nanocrystalline, Optical emission spectroscopy",

author = "Kau, {Li Han} and Huang, {Hung Jui} and Chang, {Hsueh Er} and Hsieh, {Yu Lin} and Lee, {Chien Chieh} and Fuh, {Yiin Kuen} and Li, {Tomi T.}",

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doi = "10.3390/coatings9050305",

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TY - JOUR

T1 - Correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition of nanocrystalline silicon thin films

AU - Kau, Li Han

AU - Huang, Hung Jui

AU - Chang, Hsueh Er

AU - Hsieh, Yu Lin

AU - Lee, Chien Chieh

AU - Fuh, Yiin Kuen

AU - Li, Tomi T.

PY - 2019/5/1

Y1 - 2019/5/1

N2 - In this paper, the correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition (PECVD) was systematically investigated in SiH 4 plasma diluted by various hydrogen dilution ratios. At the onset of nanocrystallinity in SiH 4- depleted plasma condition, the SiH + radical reached a threshold value as the dominant radical, such that a-Si to nc-Si transition was obtained. Furthermore, the experimental data of impedance analysis showed that matching behavior can be greatly influenced by variable plasma parameters due to the change of various hydrogen dilution ratios, which is consistent with the recorded optical emission spectra (OES) of Hα* radicals. Quadruple mass spectrometry (QMS) and transmission electron microscopy (TEM) were employed as associated diagnostic and characterization tools to confirm the phase transformation and existence of silicon nanocrystals.

AB - In this paper, the correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition (PECVD) was systematically investigated in SiH 4 plasma diluted by various hydrogen dilution ratios. At the onset of nanocrystallinity in SiH 4- depleted plasma condition, the SiH + radical reached a threshold value as the dominant radical, such that a-Si to nc-Si transition was obtained. Furthermore, the experimental data of impedance analysis showed that matching behavior can be greatly influenced by variable plasma parameters due to the change of various hydrogen dilution ratios, which is consistent with the recorded optical emission spectra (OES) of Hα* radicals. Quadruple mass spectrometry (QMS) and transmission electron microscopy (TEM) were employed as associated diagnostic and characterization tools to confirm the phase transformation and existence of silicon nanocrystals.

KW - Crystalline fraction

KW - Crystallite size

KW - Hydrogen dilution ratio

KW - Impedance analysis

KW - Nanocrystalline

KW - Optical emission spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85065785549&partnerID=8YFLogxK

U2 - 10.3390/coatings9050305

DO - 10.3390/coatings9050305

M3 - 期刊論文

AN - SCOPUS:85065785549

SN - 2079-6412

VL - 9

JO - Coatings

JF - Coatings

IS - 5

M1 - 305

ER -

Correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition of nanocrystalline silicon thin films

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Keywords

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