Correction: On the development of order and interfaces during growth of ultrathin La2CuO4 films by molecular beam epitaxy (ACS Applied Electronic Materials (2021) 3:11 (5124-5130) DOI: 10.1021/acsaelm.1c00860)

Hawoong Hong; Xinyue Fang; Friederike Wrobel; Meng Kai Lin; Zhan Zhang; Kevin M. Peterson; Anand Bhattacharya; Dillon D. Fong; Tai Chang Chiang

doi:10.1021/acsaelm.2c01519

Correction: On the development of order and interfaces during growth of ultrathin La₂CuO₄ films by molecular beam epitaxy (ACS Applied Electronic Materials (2021) 3:11 (5124-5130) DOI: 10.1021/acsaelm.1c00860)

Hawoong Hong, Xinyue Fang, Friederike Wrobel, Meng Kai Lin, Zhan Zhang, Kevin M. Peterson, Anand Bhattacharya, Dillon D. Fong, Tai Chang Chiang

Department of Physics

Research output: Contribution to journal › Comment/debate

Abstract

In the original version of this article, we did not make the proper acknowledgments. We provide the revised acknowledgments below. This correction does not alter the conclusions of this work.

Original language	English
Pages (from-to)	6389
Number of pages	1
Journal	ACS Applied Electronic Materials
Volume	4
Issue number	12
DOIs	https://doi.org/10.1021/acsaelm.2c01519
State	Published - 27 Dec 2022

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Hong, H., Fang, X., Wrobel, F., Lin, M. K., Zhang, Z., Peterson, K. M., Bhattacharya, A., Fong, D. D., & Chiang, T. C. (2022). Correction: On the development of order and interfaces during growth of ultrathin La₂CuO₄ films by molecular beam epitaxy (ACS Applied Electronic Materials (2021) 3:11 (5124-5130) DOI: 10.1021/acsaelm.1c00860). ACS Applied Electronic Materials, 4(12), 6389. https://doi.org/10.1021/acsaelm.2c01519

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title = "Correction: On the development of order and interfaces during growth of ultrathin La2CuO4 films by molecular beam epitaxy (ACS Applied Electronic Materials (2021) 3:11 (5124-5130) DOI: 10.1021/acsaelm.1c00860)",

abstract = "In the original version of this article, we did not make the proper acknowledgments. We provide the revised acknowledgments below. This correction does not alter the conclusions of this work.",

author = "Hawoong Hong and Xinyue Fang and Friederike Wrobel and Lin, {Meng Kai} and Zhan Zhang and Peterson, {Kevin M.} and Anand Bhattacharya and Fong, {Dillon D.} and Chiang, {Tai Chang}",

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Hong, H, Fang, X, Wrobel, F, Lin, MK, Zhang, Z, Peterson, KM, Bhattacharya, A, Fong, DD & Chiang, TC 2022, 'Correction: On the development of order and interfaces during growth of ultrathin La₂CuO₄ films by molecular beam epitaxy (ACS Applied Electronic Materials (2021) 3:11 (5124-5130) DOI: 10.1021/acsaelm.1c00860)', ACS Applied Electronic Materials, vol. 4, no. 12, pp. 6389. https://doi.org/10.1021/acsaelm.2c01519

Correction: On the development of order and interfaces during growth of ultrathin La₂CuO₄ films by molecular beam epitaxy (ACS Applied Electronic Materials (2021) 3:11 (5124-5130) DOI: 10.1021/acsaelm.1c00860). / Hong, Hawoong; Fang, Xinyue; Wrobel, Friederike et al.
In: ACS Applied Electronic Materials, Vol. 4, No. 12, 27.12.2022, p. 6389.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Correction

T2 - On the development of order and interfaces during growth of ultrathin La2CuO4 films by molecular beam epitaxy (ACS Applied Electronic Materials (2021) 3:11 (5124-5130) DOI: 10.1021/acsaelm.1c00860)

AU - Hong, Hawoong

AU - Fang, Xinyue

AU - Wrobel, Friederike

AU - Lin, Meng Kai

AU - Zhang, Zhan

AU - Peterson, Kevin M.

AU - Bhattacharya, Anand

AU - Fong, Dillon D.

AU - Chiang, Tai Chang

PY - 2022/12/27

Y1 - 2022/12/27

N2 - In the original version of this article, we did not make the proper acknowledgments. We provide the revised acknowledgments below. This correction does not alter the conclusions of this work.

AB - In the original version of this article, we did not make the proper acknowledgments. We provide the revised acknowledgments below. This correction does not alter the conclusions of this work.

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U2 - 10.1021/acsaelm.2c01519

DO - 10.1021/acsaelm.2c01519

M3 - 評論/辯論

AN - SCOPUS:85143529894

SN - 2637-6113

VL - 4

SP - 6389

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 12

ER -