Copper/carbon nanotube composite interconnect for enhanced electromigration resistance

Yang Chai, Philip C.H. Chan, Yunyi Fu, Y. C. Chuang, C. Y. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

34 Scopus citations

Abstract

Bottom-up growth of carbon nanotubes (CNTs) and electrochemical plating approaches were combined to produce homogeneous copper/CNT composite. The measured resistivity of the copper/CNT composite at room temperature was 2.2 μΩ·cm. The electrical resistivity of copper/CNT composite at room temperature increases slightly with the increasing loading of the CNTs in the copper matrix. From room temperature to 350°C, all the composites exhibit the typical metallic increase of the electrical resistivity. Conventional Blech-Kinsbron test structure were fabricated and used to characterize the electromigration (EM) induced void growth rate. EM comparison testing of Cu and Cu/CNT composites were carried out over temperature range of 100 to 250°C and current density from 5 × 105 to 2 × 106 A/cm2. The void growth rate for the Cu/CNT composite stripe was measured and found to be around four times lower than that of the pure Cu stripe. The result suggests that Cu/CNT composite is potentially a good candidate for advanced integrated circuit interconnect application where both lower electrical resistivity and better EM resistance are required.

Original languageEnglish
Title of host publication2008 Proceedings 58th Electronic Components and Technology Conference, ECTC
Pages412-420
Number of pages9
DOIs
StatePublished - 2008
Event2008 58th Electronic Components and Technology Conference, ECTC - Lake Buena Vista, FL, United States
Duration: 27 May 200830 May 2008

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Conference

Conference2008 58th Electronic Components and Technology Conference, ECTC
Country/TerritoryUnited States
CityLake Buena Vista, FL
Period27/05/0830/05/08

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