Contamination reduction for 150 mm SiC substrates by integrating CMP and Post-CMP cleaning

Keyphrases

• Chemical Mechanical Polishing 100%
• Silicon Carbide Substrate 100%
• Contamination Prevention 100%
• Contamination Indices 60%
• Epitaxial Growth 40%
• Aluminum Metal 20%
• Epitaxial Layers 20%
• Surface Defects 20%
• Mass Production 20%
• Cleaning Methods 20%
• Surface Particle 20%
• Crystal Defects 20%
• Polishing Slurry 20%
• Carrot 20%
• Particle Contamination 20%
• Scrubber 20%
• Metal Contamination 20%
• General Chemical 20%
• Commercial Chemicals 20%
• Substrate Contamination 20%
• Manganese Metal 20%
• Silicon Carbide Devices 20%
• Polytype Inclusion 20%

Material Science

• Silicon Carbide 100%
• Chemical Mechanical Planarization 100%
• Epitaxy 40%
• Aluminum 20%
• Manganese 20%
• Surface Defect 20%
• Surface (Surface Science) 20%
• Epitaxial Film 20%
• Crystal Defect 20%

Engineering

• Chemical Mechanical Polishing 100%
• Critical Role 20%
• Aluminum Metal 20%
• Particle Surface 20%
• Great Influence 20%
• Polishing Slurry 20%
• Polytypes 20%
• Manganese Metal 20%
• Mass Production 20%
• Surface Defect 20%
• Epitaxial Film 20%