Computational Screening and Multiscale Simulation of Barrier-Free Contacts for 2D Semiconductor pFETs

Ning Yang, Yuxuan Cosmi Lin, Chih Piao Chuu, Saifur Rahman, Tong Wu, Ang Sheng Chou, San Lin Liew, Kohei Fujiwara, Hung Yu Chen, Junya Ikeda, Atsushi Tsukazaki, Duen Huei Hou, Wei Yen Woon, Szuya Liao, Shengxi Huang, Xiaofeng Qian, Jing Guo, Iuliana Radu, H. S. Philip Wong, Han Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Low-resistance p-type contacts to two-dimensional (2D) semiconductors remains a critical challenge towards the industrial application of 2D channel materials in advanced logic technology. To address this challenge, we computationally screen and identify designs for ultralow-resistance p-type contacts to 2D semiconductors such as WSe2 by combining ab initio density-functional-theory (DFT) and quantum device simulations. Two new contact strategies, van der Waals metallic contact (such as 1H-NbS2), and bulk semimetallic contact (such as Co3 Sn2 S2), are identified as realistic pathways to achieving Schottky-barrier-free and low-contact-resistance p-type contacts for 2D semiconductor pFETs. Simulations of these new strategies suggest reduced metal-induced gap states, negligible Schottky barrier height and small contact resistance (down to 20 Ω·μm). Preliminary experimental results in developing Co3 Sn2 S2 as a new semimetal contact material are also demonstrated.

Original languageEnglish
Title of host publication2022 International Electron Devices Meeting, IEDM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2811-2814
Number of pages4
ISBN (Electronic)9781665489591
DOIs
StatePublished - 2022
Event2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duration: 3 Dec 20227 Dec 2022

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2022-December
ISSN (Print)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Country/TerritoryUnited States
CitySan Francisco
Period3/12/227/12/22

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