The information on variations in indium composition, aggregation size, and quantum well width is crucially important for understanding the optical properties; and, hence, the fabrication of efficient light-emitting devices. Our results showed that spinodal decomposition could occur in InGaN/GaN multiple-quantum wells with 20 % nominal indium content, grown with MOCVD. In such a structure, ordering, planar faults, clustering, and phase separation were simultaneously observed with high-resolution transmission electron microscopy, selected area diffraction, and X-ray diffraction. It seemed that the indium-rich precipitates with diameter ranging from 5 to 10 nm has preference for aggregation near V-shape defects.
|Number of pages||6|
|Journal||Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an|
|State||Published - May 2002|
- Indium aggregation
- InGaN/GaN quantum well structures
- Phase separation