Compositional inhomogeneities in InGaN/GaN quantum wells studied with high resolution transmission electron microscopy

Yen Sheng Lin; Chen Hsu; Kung Jeng Ma; Shih Wei Feng; Chi Chih Liao; C. C. Yang; Chang Cheng Chou; Chia Ming Lee; Jen Inn Chyi

Compositional inhomogeneities in InGaN/GaN quantum wells studied with high resolution transmission electron microscopy

Yen Sheng Lin, Chen Hsu, Kung Jeng Ma, Shih Wei Feng, Chi Chih Liao, C. C. Yang, Chang Cheng Chou, Chia Ming Lee, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The information on variations in indium composition, aggregation size, and quantum well width is crucially important for understanding the optical properties; and, hence, the fabrication of efficient light-emitting devices. Our results showed that spinodal decomposition could occur in InGaN/GaN multiple-quantum wells with 20 % nominal indium content, grown with MOCVD. In such a structure, ordering, planar faults, clustering, and phase separation were simultaneously observed with high-resolution transmission electron microscopy, selected area diffraction, and X-ray diffraction. It seemed that the indium-rich precipitates with diameter ranging from 5 to 10 nm has preference for aggregation near V-shape defects.

Original language	English
Pages (from-to)	121-126
Number of pages	6
Journal	Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
Volume	9
Issue number	2
State	Published - May 2002

Keywords

Indium aggregation
InGaN/GaN quantum well structures
Phase separation

Cite this

Lin, Y. S., Hsu, C., Ma, K. J., Feng, S. W., Liao, C. C., Yang, C. C., Chou, C. C., Lee, C. M., & Chyi, J. I. (2002). Compositional inhomogeneities in InGaN/GaN quantum wells studied with high resolution transmission electron microscopy. Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an, 9(2), 121-126.

Lin, Yen Sheng ; Hsu, Chen ; Ma, Kung Jeng et al. / Compositional inhomogeneities in InGaN/GaN quantum wells studied with high resolution transmission electron microscopy. In: Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an. 2002 ; Vol. 9, No. 2. pp. 121-126.

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abstract = "The information on variations in indium composition, aggregation size, and quantum well width is crucially important for understanding the optical properties; and, hence, the fabrication of efficient light-emitting devices. Our results showed that spinodal decomposition could occur in InGaN/GaN multiple-quantum wells with 20 % nominal indium content, grown with MOCVD. In such a structure, ordering, planar faults, clustering, and phase separation were simultaneously observed with high-resolution transmission electron microscopy, selected area diffraction, and X-ray diffraction. It seemed that the indium-rich precipitates with diameter ranging from 5 to 10 nm has preference for aggregation near V-shape defects.",

keywords = "Indium aggregation, InGaN/GaN quantum well structures, Phase separation",

author = "Lin, {Yen Sheng} and Chen Hsu and Ma, {Kung Jeng} and Feng, {Shih Wei} and Liao, {Chi Chih} and Yang, {C. C.} and Chou, {Chang Cheng} and Lee, {Chia Ming} and Chyi, {Jen Inn}",

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volume = "9",

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Lin, YS, Hsu, C, Ma, KJ, Feng, SW, Liao, CC, Yang, CC, Chou, CC, Lee, CM & Chyi, JI 2002, 'Compositional inhomogeneities in InGaN/GaN quantum wells studied with high resolution transmission electron microscopy', Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an, vol. 9, no. 2, pp. 121-126.

Compositional inhomogeneities in InGaN/GaN quantum wells studied with high resolution transmission electron microscopy. / Lin, Yen Sheng; Hsu, Chen; Ma, Kung Jeng et al.
In: Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an, Vol. 9, No. 2, 05.2002, p. 121-126.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Compositional inhomogeneities in InGaN/GaN quantum wells studied with high resolution transmission electron microscopy

AU - Lin, Yen Sheng

AU - Hsu, Chen

AU - Ma, Kung Jeng

AU - Feng, Shih Wei

AU - Liao, Chi Chih

AU - Yang, C. C.

AU - Chou, Chang Cheng

AU - Lee, Chia Ming

AU - Chyi, Jen Inn

PY - 2002/5

Y1 - 2002/5

N2 - The information on variations in indium composition, aggregation size, and quantum well width is crucially important for understanding the optical properties; and, hence, the fabrication of efficient light-emitting devices. Our results showed that spinodal decomposition could occur in InGaN/GaN multiple-quantum wells with 20 % nominal indium content, grown with MOCVD. In such a structure, ordering, planar faults, clustering, and phase separation were simultaneously observed with high-resolution transmission electron microscopy, selected area diffraction, and X-ray diffraction. It seemed that the indium-rich precipitates with diameter ranging from 5 to 10 nm has preference for aggregation near V-shape defects.

AB - The information on variations in indium composition, aggregation size, and quantum well width is crucially important for understanding the optical properties; and, hence, the fabrication of efficient light-emitting devices. Our results showed that spinodal decomposition could occur in InGaN/GaN multiple-quantum wells with 20 % nominal indium content, grown with MOCVD. In such a structure, ordering, planar faults, clustering, and phase separation were simultaneously observed with high-resolution transmission electron microscopy, selected area diffraction, and X-ray diffraction. It seemed that the indium-rich precipitates with diameter ranging from 5 to 10 nm has preference for aggregation near V-shape defects.

KW - Indium aggregation

KW - InGaN/GaN quantum well structures

KW - Phase separation

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M3 - 期刊論文

AN - SCOPUS:0036571854

SN - 1023-4462

VL - 9

SP - 121

EP - 126

JO - Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an

JF - Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an

IS - 2

ER -

Compositional inhomogeneities in InGaN/GaN quantum wells studied with high resolution transmission electron microscopy

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Keywords

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