Comparison of the performance of InGaNAlGaN MQW LEDs grown on c-plane and a-plane sapphire substrates

Wei Tsai Liao, Jyh Rong Gong, Cheng Liang Wang, Wei Lin Wang, Chih Chang Tsuei, Cheng Yen Lee, Keh Chang Chen, Jeng Rong Ho, Ren C. Luo

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5 Scopus citations

Abstract

We report a comparative study on the performance of InGaNAlGaN multiple quantum well (MQW) light emitting diodes (LEDs) fabricated on c- and a-plane sapphire substrates, respectively. It was found that the LEDs grown on a-plane sapphire substrates exhibited enhanced electroluminescence intensity, decreased double crystal X-ray diffraction linewidth, reduced etching pit density, and smaller ideality factor compared to those deposited on c-plane sapphire substrates. The improved LED characteristics are attributed to threading dislocation density decrement inside the LEDs due to the reduced mismatch between LED structure and a-plane sapphire substrate.

Original languageEnglish
Article number015701ESL
Pages (from-to)H5-H7
JournalElectrochemical and Solid-State Letters
Volume10
Issue number1
DOIs
StatePublished - 2007

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