Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Jihyun Kim, F. Ren, G. T. Thaler, M. E. Overberg, R. Frazier, C. R. Abernathy, S. J. Pearton, C. M. Lee, J. I. Chyi, R. G. Wilson, J. M. Zavada

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