Comparison of termination structure design by device simulator

Chien Nan Liao, Ping Hung Lai, Tien Chun Li, Feng Tso Chien, Yao Tsung Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Termination region plays an important role in high voltage power VDMOSFETs. Termination structure such as floating-field-limiting-rings and field plates are the common structures used in a termination region because they can be fabricated without additional masks. However, sometimes we use both of them, sometimes only the floating-field-limiting-ring. The difference between these structures must be known while designing. In this paper, we compare and discuss the difference of the floating-field-limiting-rings with and without field plates. Understanding the difference is helpful for designing and saving time.

Original languageEnglish
Title of host publication2nd International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2010
Pages530-533
Number of pages4
DOIs
StatePublished - 2010
Event2nd International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2010 - Hefei, China
Duration: 16 Jun 201018 Jun 2010

Publication series

Name2nd International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2010

Conference

Conference2nd International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2010
Country/TerritoryChina
CityHefei
Period16/06/1018/06/10

Keywords

  • Field plate
  • Floating-field-limiting-ring
  • Power VDMOSFET
  • Termination

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