Comparison of photoluminescence properties between MBE and MOCVD grown InGaN/GaN multiple quantum well structures

Shih Wei Feng; Chi Chih Liao; C. C. Yang; Yen Sheng Lin; Kung Jeng Ma; Chin An Chang; E. Tsou Wu; Fung Jei Lai; Chang Cheng Chuo; Chia Ming Lee; Jen Inn Chyi

Comparison of photoluminescence properties between MBE and MOCVD grown InGaN/GaN multiple quantum well structures

Shih Wei Feng, Chi Chih Liao, C. C. Yang, Yen Sheng Lin, Kung Jeng Ma, Chin An Chang, E. Tsou Wu, Fung Jei Lai, Chang Cheng Chuo, Chia Ming Lee, Jen Inn Chyi

Research output: Contribution to journal › Article › peer-review

Abstract

Temperature dependencies of photoluminescence (PL) characteristics of an MBE and an MOCVD grown InGaN/GaN multiple quantum well samples of similar structure and composition were compared. Based on the calculations of PL mean wavelength and root-mean-square spectral width, we observed the differences in their photon emission characteristics. Although both of them showed S-shape variations in mean wavelength, their values are quite different in spite of the similar structure and composition. Meanwhile, the MBE sample showed a unique two-component decay in the PL integrated intensity. The possible mechanisms behind these phenomena are also discussed in this paper.

Original language	English
Pages (from-to)	103-108
Number of pages	6
Journal	Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
Volume	9
Issue number	2
State	Published - May 2002

Keywords

InGaN/GaN multiple quantum wells
Indium-rich clusters
Photoluminescence

Cite this

Feng, S. W., Liao, C. C., Yang, C. C., Lin, Y. S., Ma, K. J., Chang, C. A., Wu, E. T., Lai, F. J., Chuo, C. C., Lee, C. M., & Chyi, J. I. (2002). Comparison of photoluminescence properties between MBE and MOCVD grown InGaN/GaN multiple quantum well structures. Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an, 9(2), 103-108.

Feng, Shih Wei ; Liao, Chi Chih ; Yang, C. C. et al. / Comparison of photoluminescence properties between MBE and MOCVD grown InGaN/GaN multiple quantum well structures. In: Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an. 2002 ; Vol. 9, No. 2. pp. 103-108.

@article{b2ed7c1d7cfc4545ac3b55f1863291cc,

title = "Comparison of photoluminescence properties between MBE and MOCVD grown InGaN/GaN multiple quantum well structures",

abstract = "Temperature dependencies of photoluminescence (PL) characteristics of an MBE and an MOCVD grown InGaN/GaN multiple quantum well samples of similar structure and composition were compared. Based on the calculations of PL mean wavelength and root-mean-square spectral width, we observed the differences in their photon emission characteristics. Although both of them showed S-shape variations in mean wavelength, their values are quite different in spite of the similar structure and composition. Meanwhile, the MBE sample showed a unique two-component decay in the PL integrated intensity. The possible mechanisms behind these phenomena are also discussed in this paper.",

keywords = "InGaN/GaN multiple quantum wells, Indium-rich clusters, Photoluminescence",

author = "Feng, {Shih Wei} and Liao, {Chi Chih} and Yang, {C. C.} and Lin, {Yen Sheng} and Ma, {Kung Jeng} and Chang, {Chin An} and Wu, {E. Tsou} and Lai, {Fung Jei} and Chuo, {Chang Cheng} and Lee, {Chia Ming} and Chyi, {Jen Inn}",

year = "2002",

month = may,

language = "???core.languages.en_GB???",

volume = "9",

pages = "103--108",

journal = "Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an",

issn = "1023-4462",

number = "2",

}

Feng, SW, Liao, CC, Yang, CC, Lin, YS, Ma, KJ, Chang, CA, Wu, ET, Lai, FJ, Chuo, CC, Lee, CM & Chyi, JI 2002, 'Comparison of photoluminescence properties between MBE and MOCVD grown InGaN/GaN multiple quantum well structures', Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an, vol. 9, no. 2, pp. 103-108.

Comparison of photoluminescence properties between MBE and MOCVD grown InGaN/GaN multiple quantum well structures. / Feng, Shih Wei; Liao, Chi Chih; Yang, C. C. et al.
In: Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an, Vol. 9, No. 2, 05.2002, p. 103-108.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Comparison of photoluminescence properties between MBE and MOCVD grown InGaN/GaN multiple quantum well structures

AU - Feng, Shih Wei

AU - Liao, Chi Chih

AU - Yang, C. C.

AU - Lin, Yen Sheng

AU - Ma, Kung Jeng

AU - Chang, Chin An

AU - Wu, E. Tsou

AU - Lai, Fung Jei

AU - Chuo, Chang Cheng

AU - Lee, Chia Ming

AU - Chyi, Jen Inn

PY - 2002/5

Y1 - 2002/5

N2 - Temperature dependencies of photoluminescence (PL) characteristics of an MBE and an MOCVD grown InGaN/GaN multiple quantum well samples of similar structure and composition were compared. Based on the calculations of PL mean wavelength and root-mean-square spectral width, we observed the differences in their photon emission characteristics. Although both of them showed S-shape variations in mean wavelength, their values are quite different in spite of the similar structure and composition. Meanwhile, the MBE sample showed a unique two-component decay in the PL integrated intensity. The possible mechanisms behind these phenomena are also discussed in this paper.

AB - Temperature dependencies of photoluminescence (PL) characteristics of an MBE and an MOCVD grown InGaN/GaN multiple quantum well samples of similar structure and composition were compared. Based on the calculations of PL mean wavelength and root-mean-square spectral width, we observed the differences in their photon emission characteristics. Although both of them showed S-shape variations in mean wavelength, their values are quite different in spite of the similar structure and composition. Meanwhile, the MBE sample showed a unique two-component decay in the PL integrated intensity. The possible mechanisms behind these phenomena are also discussed in this paper.

KW - InGaN/GaN multiple quantum wells

KW - Indium-rich clusters

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=0036571866&partnerID=8YFLogxK

M3 - 期刊論文

AN - SCOPUS:0036571866

SN - 1023-4462

VL - 9

SP - 103

EP - 108

JO - Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an

JF - Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an

IS - 2

ER -

Comparison of photoluminescence properties between MBE and MOCVD grown InGaN/GaN multiple quantum well structures

Abstract

Keywords

Fingerprint

Cite this