@article{f9e6d434b4584375827477d93b03cdd8,
title = "Comparison of GaN P-I-N and Schottky rectifier performance",
abstract = "The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (∼5 V for the p-i-n diodes; ∼3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34 ± 0.05 V · K-1.",
keywords = "GaN, Power electronics, Rectifiers",
author = "Zhang, {Anping P.} and Dang, {Gerard T.} and Fan Ren and Hyun Cho and Lee, {Kyu Pil} and Pearton, {Stephen J.} and Chyi, {Jenn Inn} and Nee, {T. E.} and Lee, {C. M.} and Chuo, {C. C.}",
note = "Funding Information: Manuscript received February 29, 2000; revised August 15, 2000. This work was supported in part by a DARPA/EPRI Grant (D. Radack/J. Melcher) MDA 972-98-1-006, monitored by ONR (J. C. Zolper) and by the NSF under Grant DMR 97-32865. The work at National Central University is sponsored by the National Science Council of Taiwan, R.O.C., under Contract NSC-88-2215E-008-012.",
year = "2001",
month = mar,
doi = "10.1109/16.906427",
language = "???core.languages.en_GB???",
volume = "48",
pages = "407--411",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
number = "3",
}