Comparison of GaN P-I-N and Schottky rectifier performance

Anping P. Zhang, Gerard T. Dang, Fan Ren, Hyun Cho, Kyu Pil Lee, Stephen J. Pearton, Jenn Inn Chyi, T. E. Nee, C. M. Lee, C. C. Chuo

Research output: Contribution to journalArticlepeer-review

79 Scopus citations


The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (∼5 V for the p-i-n diodes; ∼3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34 ± 0.05 V · K-1.

Original languageEnglish
Pages (from-to)407-411
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number3
StatePublished - Mar 2001


  • GaN
  • Power electronics
  • Rectifiers


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