Comparison of enhancement- and depletion-mode triple stacked power amplifiers in 0.5 μm AlGaAs/GaAs PHEMT technology

Chih Chun Shen, Hong Yeh Chang, George D. Vendelin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

This paper describes triple stacked power amplifiers using 0.5 μm enhancement- and depletion-mode (E/D-mode) AlGaAs/GaAs pseudomorphic high electron-mobility transistors (PHEMTs). Based on the optimum capacitance at the gate termination of common-gate (CG) transistor, the output 1-dB compression points (P1dB) of the E- and D-mode triple stacked power amplifiers are 22.1 and 19.3 dBm, respectively. The third-order output intercept point (OIP3) of the E- and D-mode stacked power amplifiers are higher than 32 and 25 dBm, respectively. The E-mode stacked power amplifier demonstrates better output power and linearity as compared with the D-mode stacked power amplifier due to the device characteristics. Moreover, the comparison between the E- and the D-mode tacked power amplifiers is also presented.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2009, EuMW 2009
Subtitle of host publicationScience, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
Pages222-225
Number of pages4
StatePublished - 2009
EventEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome, Italy
Duration: 28 Sep 20092 Oct 2009

Publication series

NameEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Conference

ConferenceEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
Country/TerritoryItaly
CityRome
Period28/09/092/10/09

Keywords

  • Enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT)
  • Power Amplifier (PA)
  • Stacked PA

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