@inproceedings{c09495d6fd0b4b829d19d117fa45ed24,
title = "Comparison of Drain Current Transient Characteristics of AlGaN/GaN HEMTs in the Linear and Saturation Regions after OFF-state Stress",
abstract = "This work presents drain current transient characteristics of AlGaN/GaN HEMTs in the linear and saturation regions after OFF-state stress. Due to the various RF input power and DC quiescent point, a broad range sweep happens for switching-mode RF power amplifier application. As the device switches from OFF-state stress into an ON-state linear region, the temperature dependence of the de-trapping is observed in this work. A single trap with an activation energy (EA) of around 0.52 eV is extracted for the device. On the contrary, the device switches from OFF-state stress into an ON-state in the saturation region, and the de-trapping mechanism is dominated by electric field-assisted tunneling. In addition, the trap (∼ 0.52eV) is added to the buffer layer in Silvaco TCAD simulation to verify the observation. By this method, it is possible to estimate the trap density to correlate with the experiment.",
keywords = "GaN, current dispersion, trapping",
author = "Cho, {Chih Wei} and Hsin, {Yue Ming}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 ; Conference date: 27-08-2023 Through 29-08-2023",
year = "2023",
doi = "10.1109/WiPDAAsia58218.2023.10261923",
language = "???core.languages.en_GB???",
series = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",
}