Collector doping design for improving DC and RF performance in InGaP/GaAs HBTs before onset of Kirk effect

Che Ming Wang, Kuang Po Hsueh, Yue Ming Hsin

Research output: Contribution to journalArticlepeer-review

Abstract

A thin high-doping layer was inserted in the uniform doped collector to extend the operational current before current gain and cut-off frequency roll-off. Two times higher collector current before on-set of Kirk effect was obtained and the resulted John figure of merit was improved from 846 to 1008 V-GHz.

Original languageEnglish
Pages (from-to)1790-1792
Number of pages3
JournalIEICE Transactions on Electronics
VolumeE88-C
Issue number8
DOIs
StatePublished - Aug 2005

Keywords

  • Collector doping
  • HBT
  • Kirk effect

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