Collector doping design for improving DC and RF performance in InGaP/GaAs HBTs before onset of Kirk effect

Che Ming Wang; Kuang Po Hsueh; Yue Ming Hsin

doi:10.1093/ietele/e88-c.8.1790

Collector doping design for improving DC and RF performance in InGaP/GaAs HBTs before onset of Kirk effect

Che Ming Wang, Kuang Po Hsueh, Yue Ming Hsin

Research output: Contribution to journal › Article › peer-review

Abstract

A thin high-doping layer was inserted in the uniform doped collector to extend the operational current before current gain and cut-off frequency roll-off. Two times higher collector current before on-set of Kirk effect was obtained and the resulted John figure of merit was improved from 846 to 1008 V-GHz.

Original language	English
Pages (from-to)	1790-1792
Number of pages	3
Journal	IEICE Transactions on Electronics
Volume	E88-C
Issue number	8
DOIs	https://doi.org/10.1093/ietele/e88-c.8.1790
State	Published - Aug 2005

Keywords

Collector doping
HBT
Kirk effect

Access to Document

10.1093/ietele/e88-c.8.1790

Cite this

@article{d7ccf5a400194229b7d1024cfe99239b,

title = "Collector doping design for improving DC and RF performance in InGaP/GaAs HBTs before onset of Kirk effect",

abstract = "A thin high-doping layer was inserted in the uniform doped collector to extend the operational current before current gain and cut-off frequency roll-off. Two times higher collector current before on-set of Kirk effect was obtained and the resulted John figure of merit was improved from 846 to 1008 V-GHz.",

keywords = "Collector doping, HBT, Kirk effect",

author = "Wang, {Che Ming} and Hsueh, {Kuang Po} and Hsin, {Yue Ming}",

year = "2005",

month = aug,

doi = "10.1093/ietele/e88-c.8.1790",

language = "???core.languages.en_GB???",

volume = "E88-C",

pages = "1790--1792",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

number = "8",

}

TY - JOUR

T1 - Collector doping design for improving DC and RF performance in InGaP/GaAs HBTs before onset of Kirk effect

AU - Wang, Che Ming

AU - Hsueh, Kuang Po

AU - Hsin, Yue Ming

PY - 2005/8

Y1 - 2005/8

N2 - A thin high-doping layer was inserted in the uniform doped collector to extend the operational current before current gain and cut-off frequency roll-off. Two times higher collector current before on-set of Kirk effect was obtained and the resulted John figure of merit was improved from 846 to 1008 V-GHz.

AB - A thin high-doping layer was inserted in the uniform doped collector to extend the operational current before current gain and cut-off frequency roll-off. Two times higher collector current before on-set of Kirk effect was obtained and the resulted John figure of merit was improved from 846 to 1008 V-GHz.

KW - Collector doping

KW - HBT

KW - Kirk effect

UR - http://www.scopus.com/inward/record.url?scp=26044481773&partnerID=8YFLogxK

U2 - 10.1093/ietele/e88-c.8.1790

DO - 10.1093/ietele/e88-c.8.1790

M3 - 期刊論文

AN - SCOPUS:26044481773

SN - 0916-8524

VL - E88-C

SP - 1790

EP - 1792

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 8

ER -

Collector doping design for improving DC and RF performance in InGaP/GaAs HBTs before onset of Kirk effect

Abstract

Keywords

Access to Document

Fingerprint

Cite this