Collective and individual emissions for InGaAs quantum dots in photonic crystal nanocavity

W. Y. Chen, H. S. Chang, W. H. Chang, T. P. Hsieh, J. I. Chyi, T. M. Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigate the collective and individual emissions from In 0.5Ga0.5As quantum dots (QDs) in single-defect photonic crystal nanocavities. The cavity mode collectively excited by the QD ensemble shows a pair of dipole-like modes with definite linear polarizations. Single exciton emission lines are resolved under low excitation power. By monitoring the power dependence of individual QD emissions, a nearly tenfold light enhancement for on-resonance QDs is observed. The polarization states of individual QDs are also investigated. It is found that either a pure dipole mode or a mixture of both dipole modes could be excited by an individual dot. These behaviors are attributed to the random distribution of QD location in the nanocavity.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages879-880
Number of pages2
DOIs
StatePublished - 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 24 Jul 200628 Jul 2006

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/TerritoryAustria
CityVienna
Period24/07/0628/07/06

Keywords

  • Photonic crystal
  • Quantum dots

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