Co-P Diffusion Barrier for p-Bi2Te3 Thermoelectric Material

Chun Hsien Wang, Hsien Chien Hsieh, Hsin Yi Lee, Albert T. Wu

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

(Bi0.25Te0.75)2Te3 (p-Bi2Te3) is thermoelectric material that can harvest waste heat into useful electric power. A severe reaction between p-Bi2Te3 and Sn-based solder decreases the reliability of thermoelectric modules. Sn/p-Bi2Te3 and Sn3.0Ag0.5Cu (SAC305)/p-Bi2Te3 with and without electroless Co-P at the interfaces were investigated in this study. Without a Co-P layer, brittle SnTe, Sn3Sb2, and Bi precipitates formed at the interface. A thin layer of SnTe after reflow results in growth of a layer-type Sn3Sb2 instead of a strip-like Sn3Sb2. The addition of a Co-P layer to both systems successfully inhibited the formation of brittle intermetallic compounds. Shear test results confirmed that the Co-P diffusion barrier also effectively increased the joint strength.

Original languageEnglish
Pages (from-to)53-57
Number of pages5
JournalJournal of Electronic Materials
Volume48
Issue number1
DOIs
StatePublished - 15 Jan 2019

Keywords

  • diffusion barrier
  • electroless Co-P
  • interfacial reaction
  • shear strength
  • Thermoelectric materials

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