Co-P Diffusion Barrier for p-Bi2Te3 Thermoelectric Material

Chun Hsien Wang; Hsien Chien Hsieh; Hsin Yi Lee; Albert T. Wu

doi:10.1007/s11664-018-6633-7

Co-P Diffusion Barrier for p-Bi₂Te₃ Thermoelectric Material

Chun Hsien Wang, Hsien Chien Hsieh, Hsin Yi Lee, Albert T. Wu

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

(Bi_0.25Te_0.75)₂Te₃ (p-Bi₂Te₃) is thermoelectric material that can harvest waste heat into useful electric power. A severe reaction between p-Bi₂Te₃ and Sn-based solder decreases the reliability of thermoelectric modules. Sn/p-Bi₂Te₃ and Sn3.0Ag0.5Cu (SAC305)/p-Bi₂Te₃ with and without electroless Co-P at the interfaces were investigated in this study. Without a Co-P layer, brittle SnTe, Sn₃Sb₂, and Bi precipitates formed at the interface. A thin layer of SnTe after reflow results in growth of a layer-type Sn₃Sb₂ instead of a strip-like Sn₃Sb₂. The addition of a Co-P layer to both systems successfully inhibited the formation of brittle intermetallic compounds. Shear test results confirmed that the Co-P diffusion barrier also effectively increased the joint strength.

Original language	English
Pages (from-to)	53-57
Number of pages	5
Journal	Journal of Electronic Materials
Volume	48
Issue number	1
DOIs	https://doi.org/10.1007/s11664-018-6633-7
State	Published - 15 Jan 2019

Keywords

Thermoelectric materials
diffusion barrier
electroless Co-P
interfacial reaction
shear strength

Access to Document

10.1007/s11664-018-6633-7

Application of Electroless Cobalt Diffusion Barrier on Telluride-Based Low- and Middle- Temperature Range Thermoelectric Module(3/3)
Wu, T.-C. (PI)
1/08/17 → 31/07/18
Project: Research

Cite this

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title = "Co-P Diffusion Barrier for p-Bi2Te3 Thermoelectric Material",

abstract = "(Bi0.25Te0.75)2Te3 (p-Bi2Te3) is thermoelectric material that can harvest waste heat into useful electric power. A severe reaction between p-Bi2Te3 and Sn-based solder decreases the reliability of thermoelectric modules. Sn/p-Bi2Te3 and Sn3.0Ag0.5Cu (SAC305)/p-Bi2Te3 with and without electroless Co-P at the interfaces were investigated in this study. Without a Co-P layer, brittle SnTe, Sn3Sb2, and Bi precipitates formed at the interface. A thin layer of SnTe after reflow results in growth of a layer-type Sn3Sb2 instead of a strip-like Sn3Sb2. The addition of a Co-P layer to both systems successfully inhibited the formation of brittle intermetallic compounds. Shear test results confirmed that the Co-P diffusion barrier also effectively increased the joint strength.",

keywords = "Thermoelectric materials, diffusion barrier, electroless Co-P, interfacial reaction, shear strength",

author = "Wang, {Chun Hsien} and Hsieh, {Hsien Chien} and Lee, {Hsin Yi} and Wu, {Albert T.}",

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T1 - Co-P Diffusion Barrier for p-Bi2Te3 Thermoelectric Material

AU - Wang, Chun Hsien

AU - Hsieh, Hsien Chien

AU - Lee, Hsin Yi

AU - Wu, Albert T.

PY - 2019/1/15

Y1 - 2019/1/15

N2 - (Bi0.25Te0.75)2Te3 (p-Bi2Te3) is thermoelectric material that can harvest waste heat into useful electric power. A severe reaction between p-Bi2Te3 and Sn-based solder decreases the reliability of thermoelectric modules. Sn/p-Bi2Te3 and Sn3.0Ag0.5Cu (SAC305)/p-Bi2Te3 with and without electroless Co-P at the interfaces were investigated in this study. Without a Co-P layer, brittle SnTe, Sn3Sb2, and Bi precipitates formed at the interface. A thin layer of SnTe after reflow results in growth of a layer-type Sn3Sb2 instead of a strip-like Sn3Sb2. The addition of a Co-P layer to both systems successfully inhibited the formation of brittle intermetallic compounds. Shear test results confirmed that the Co-P diffusion barrier also effectively increased the joint strength.

AB - (Bi0.25Te0.75)2Te3 (p-Bi2Te3) is thermoelectric material that can harvest waste heat into useful electric power. A severe reaction between p-Bi2Te3 and Sn-based solder decreases the reliability of thermoelectric modules. Sn/p-Bi2Te3 and Sn3.0Ag0.5Cu (SAC305)/p-Bi2Te3 with and without electroless Co-P at the interfaces were investigated in this study. Without a Co-P layer, brittle SnTe, Sn3Sb2, and Bi precipitates formed at the interface. A thin layer of SnTe after reflow results in growth of a layer-type Sn3Sb2 instead of a strip-like Sn3Sb2. The addition of a Co-P layer to both systems successfully inhibited the formation of brittle intermetallic compounds. Shear test results confirmed that the Co-P diffusion barrier also effectively increased the joint strength.

KW - Thermoelectric materials

KW - diffusion barrier

KW - electroless Co-P

KW - interfacial reaction

KW - shear strength

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U2 - 10.1007/s11664-018-6633-7

DO - 10.1007/s11664-018-6633-7

M3 - 期刊論文

AN - SCOPUS:85054379620

SN - 0361-5235

VL - 48

SP - 53

EP - 57

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 1

ER -

Co-P Diffusion Barrier for p-Bi2Te3 Thermoelectric Material

Abstract

Keywords

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Projects

Application of Electroless Cobalt Diffusion Barrier on Telluride-Based Low- and Middle- Temperature Range Thermoelectric Module(3/3)

Cite this

Co-P Diffusion Barrier for p-Bi₂Te₃ Thermoelectric Material