@article{4a122a19f25e4838b9aa4a83142c3c86,
title = "CMOS-compatible generation of self-organized 3-D Ge quantum dot array for photonic and thermoelectric applications",
abstract = "We demonstrate a CMOS-compatible scheme, selective oxidation of SiGe pillars, for creating well-organized 3-D Ge quantum dot (QD) array by guiding QDs migration along the oxidation path and thus placing them on targeted locations where the ultimate oxidation occurs. Stacked QDs exhibit tunable luminescence over the visible and possess low thermal conductivity, showing promise for nanophotonic and energy conversion devices.",
keywords = "Ge quantum dot (QD), photonics, thermoelectrics (TE)",
author = "Wang, {Ching Chi} and Chen, {Kuan Hung} and Chen, {Inn Hao} and Lai, {Wei Ting} and Chang, {Hung Tai} and Chen, {Wen Yen} and Hsu, {Jung Chao} and Lee, {Shen Wei} and Hsu, {Tzu Min} and Hung, {Ming Tsung} and Li, {Pei Wen}",
note = "Funding Information: Manuscript received January 3, 2012; revised April 18, 2012 and May 13, 2012; accepted May 23, 2012. Date of publication June 1, 2012; date of current version July 11, 2012. This work was supported by the National Science Council of Chinaunder Contract 100-2120-M-008-003 and Contract 99-2221-E-008-095-MY3. The review of this paper was arranged by Associate Editor E. Tutuc.",
year = "2012",
doi = "10.1109/TNANO.2012.2202124",
language = "???core.languages.en_GB???",
volume = "11",
pages = "657--660",
journal = "IEEE Transactions on Nanotechnology",
issn = "1536-125X",
number = "4",
}