Characterizations of photoconductivity of graphene oxide thin films

Shiang Kuo Chang-Jian, Jeng Rong Ho, J. W. John Cheng, Ya Ping Hsieh

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12 Scopus citations


Characterizations of photoresponse of a graphene oxide (GO) thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τ on and τ off, respectively. τ on for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τ off was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

Original languageEnglish
Article number022104
JournalAIP Advances
Issue number2
StatePublished - Jun 2012


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