Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices

J. K. Sheu, C. H. Kuo, C. C. Chen, G. C. Chi, M. J. Jou

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Low resistivity Mg-doped Al0.15Ga0.85N/GaN strained-layer superlattices (SLs) were grown. In these SLs, the maximum hole concentration is 3 × 1018cm-3 at room temperature, i.e., larger than those for Mg-doped Al0.15Ga0.85N and GaN bulk layers with the same Cp2Mg flow rates during growth. Hall effect measurements indicate high conductivity of this structure in which the high activation efficiency is attributed to the strain-induced piezoelectric fields. In addition, photoluminescence measurements revealed a blue band at 2.9 eV in Mg-doped Al0.15Ga0.85N/GaN SLs, which could be attributed to a distant donor-to-acceptor transition feature. This work also fabricated InGaN/GaN blue light emitting diodes (LEDs) that consist of a Mg-doped Al0.15Ga0.85N/GaN SLs. Experimental results indicate that the LEDs can achieve a lower operation voltage of around 3 V, i.e., smaller than conventional devices which have an operation voltage of about 3.8 V.

Original languageEnglish
Pages (from-to)1665-1671
Number of pages7
JournalSolid-State Electronics
Issue number9
StatePublished - Sep 2001


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