Characterization of sub-THz photonic-transmitters based on GaAs-AlGaAs uni-traveling-carrier photodiodes and substrate-removed broadband antennas for impulse-radio communication

Yu Tai Li, J. W. Shi, Cheng Yu Huang, Nen Wei Chen, Shu Han Chen, J. I. Chyi, Ci Ling Pan

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A novel photonic transmitter for wireless terahertz (THz) impulse-radio (IR) communication is realized by monolithic integration of a GaAs-AlGaAs-based uni-traveling-carrier (UTC) photodiode with a substrate-removed broadband antenna. The device can radiate strong sub-THz pulses (20-mW peak-power) with a narrow pulsewidth (<2 ps) and wide bandwidth (100 ∼ 250 GHz). The maximum average power emitted by our device, under the same THz time-domain spectroscopic setup, is around ten times higher than that of the low-temperature-grown GaAs-based photoconductive antenna, while with a much lower dc bias (9 versus 35 V). The bias-dependent peak output powers of our devices suggest their suitability for application as a data modulator/emitter for photonic THz IR communication.

Original languageEnglish
Pages (from-to)1342-1344
Number of pages3
JournalIEEE Photonics Technology Letters
Volume20
Issue number16
DOIs
StatePublished - 15 Aug 2008

Keywords

  • Photonic transmitter (PT)
  • Submillimeter-wave
  • Terahertz (THz)
  • Uni-traveling-carrier photodiode (UTC-PD)

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