Characterization of low temperature GaAs grown by molecular beam epitaxy

W. C. Lee, T. M. Hsu, J. I. Chyi, G. S. Lee, W. H. Li, K. C. Lee

Research output: Contribution to journalArticlepeer-review

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Low temperature GaAs has been grown by molecular beam epitaxy at substrate temperatures between 200°C-400°C, and subsequently annealed in the growth chamber at 600°C. These samples have been characterized by X-ray and Raman spectroscopy. From the rocking curve of a high resolution double crystal X-ray diffraction system we observed that GaAs layers grown at low temperatures were highly strained and contained about 1% excess arsenic. These results have been compared with an analysis of LO and TO frequency splitting in the Raman spectra.

Original languageEnglish
Pages (from-to)66-69
Number of pages4
JournalApplied Surface Science
StatePublished - Feb 1996


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