The characteristics of self-assembled In0.5Ga0.5As quantum dot p-i-n structures with In0.1Ga0.9As, GaAs, and In0.1Al0.9As matrices are investigated using electroluminescence (EL) and current-voltage (I-V) measurements. EL spectra indicate that the quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared with those in GaAs and In0.1Al0.9As matrices. The state filling effect is observed in the power dependent EL spectra for the In0.5Ga0.5As quantum dots in In0.1Ga0.9As and GaAs matrices. I-V characteristics show that carrier tunneling-recombination is the dominant process at low bias and low temperature region for the dots in In0.1Ga0.9As and GaAs matrices. Whereas, the quantum dots in In0.1Al0.9As matrix exhibit poor optical and electrical properties due to higher defect density.
|Number of pages
|Journal of Crystal Growth
|Published - May 1999
|Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: 31 Aug 1998 → 4 Sep 1998