Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matrices

Nien Tze Yeh; Tzer En Nee; Jen Inn Chyi

doi:10.1016/S0022-0248(99)00013-5

Characterization of In_0.5Ga_0.5As quantum dot p-i-n structures with different matrices

Nien Tze Yeh, Tzer En Nee, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

The characteristics of self-assembled In_0.5Ga_0.5As quantum dot p-i-n structures with In_0.1Ga_0.9As, GaAs, and In_0.1Al_0.9As matrices are investigated using electroluminescence (EL) and current-voltage (I-V) measurements. EL spectra indicate that the quantum dots in In_0.1Ga_0.9As matrix exhibit higher intensity as compared with those in GaAs and In_0.1Al_0.9As matrices. The state filling effect is observed in the power dependent EL spectra for the In_0.5Ga_0.5As quantum dots in In_0.1Ga_0.9As and GaAs matrices. I-V characteristics show that carrier tunneling-recombination is the dominant process at low bias and low temperature region for the dots in In_0.1Ga_0.9As and GaAs matrices. Whereas, the quantum dots in In_0.1Al_0.9As matrix exhibit poor optical and electrical properties due to higher defect density.

Original language	English
Pages (from-to)	1168-1171
Number of pages	4
Journal	Journal of Crystal Growth
Volume	201
DOIs	https://doi.org/10.1016/S0022-0248(99)00013-5
State	Published - May 1999
Event	Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes Duration: 31 Aug 1998 → 4 Sep 1998

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10.1016/S0022-0248(99)00013-5

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@article{8d590565d479486ea06d155eeca60507,

title = "Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matrices",

abstract = "The characteristics of self-assembled In0.5Ga0.5As quantum dot p-i-n structures with In0.1Ga0.9As, GaAs, and In0.1Al0.9As matrices are investigated using electroluminescence (EL) and current-voltage (I-V) measurements. EL spectra indicate that the quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared with those in GaAs and In0.1Al0.9As matrices. The state filling effect is observed in the power dependent EL spectra for the In0.5Ga0.5As quantum dots in In0.1Ga0.9As and GaAs matrices. I-V characteristics show that carrier tunneling-recombination is the dominant process at low bias and low temperature region for the dots in In0.1Ga0.9As and GaAs matrices. Whereas, the quantum dots in In0.1Al0.9As matrix exhibit poor optical and electrical properties due to higher defect density.",

author = "Yeh, {Nien Tze} and Nee, {Tzer En} and Chyi, {Jen Inn}",

note = "Funding Information: The authors would like to thank Drs. J.-L. Shieh and J.-W. Pan for their assistance and fruitful discussion in MBE growth and characterization. The support of the MBE laboratory of the Center for Optical Sciences at National Central University is gratefully acknowledged. This work was supported by the National Science Council of R.O.C. under contract NSC 87-2215-E-008-012.; null ; Conference date: 31-08-1998 Through 04-09-1998",

year = "1999",

month = may,

doi = "10.1016/S0022-0248(99)00013-5",

language = "???core.languages.en_GB???",

volume = "201",

pages = "1168--1171",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

}

TY - JOUR

T1 - Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matrices

AU - Yeh, Nien Tze

AU - Nee, Tzer En

AU - Chyi, Jen Inn

N1 - Funding Information: The authors would like to thank Drs. J.-L. Shieh and J.-W. Pan for their assistance and fruitful discussion in MBE growth and characterization. The support of the MBE laboratory of the Center for Optical Sciences at National Central University is gratefully acknowledged. This work was supported by the National Science Council of R.O.C. under contract NSC 87-2215-E-008-012.

PY - 1999/5

Y1 - 1999/5

N2 - The characteristics of self-assembled In0.5Ga0.5As quantum dot p-i-n structures with In0.1Ga0.9As, GaAs, and In0.1Al0.9As matrices are investigated using electroluminescence (EL) and current-voltage (I-V) measurements. EL spectra indicate that the quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared with those in GaAs and In0.1Al0.9As matrices. The state filling effect is observed in the power dependent EL spectra for the In0.5Ga0.5As quantum dots in In0.1Ga0.9As and GaAs matrices. I-V characteristics show that carrier tunneling-recombination is the dominant process at low bias and low temperature region for the dots in In0.1Ga0.9As and GaAs matrices. Whereas, the quantum dots in In0.1Al0.9As matrix exhibit poor optical and electrical properties due to higher defect density.

AB - The characteristics of self-assembled In0.5Ga0.5As quantum dot p-i-n structures with In0.1Ga0.9As, GaAs, and In0.1Al0.9As matrices are investigated using electroluminescence (EL) and current-voltage (I-V) measurements. EL spectra indicate that the quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared with those in GaAs and In0.1Al0.9As matrices. The state filling effect is observed in the power dependent EL spectra for the In0.5Ga0.5As quantum dots in In0.1Ga0.9As and GaAs matrices. I-V characteristics show that carrier tunneling-recombination is the dominant process at low bias and low temperature region for the dots in In0.1Ga0.9As and GaAs matrices. Whereas, the quantum dots in In0.1Al0.9As matrix exhibit poor optical and electrical properties due to higher defect density.

UR - http://www.scopus.com/inward/record.url?scp=0032639424&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(99)00013-5

DO - 10.1016/S0022-0248(99)00013-5

M3 - 會議論文

AN - SCOPUS:0032639424

VL - 201

SP - 1168

EP - 1171

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

Y2 - 31 August 1998 through 4 September 1998

ER -

Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matrices

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Characterization of In_0.5Ga_0.5As quantum dot p-i-n structures with different matrices