TY - JOUR
T1 - Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matrices
AU - Yeh, Nien Tze
AU - Nee, Tzer En
AU - Chyi, Jen Inn
N1 - Funding Information:
The authors would like to thank Drs. J.-L. Shieh and J.-W. Pan for their assistance and fruitful discussion in MBE growth and characterization. The support of the MBE laboratory of the Center for Optical Sciences at National Central University is gratefully acknowledged. This work was supported by the National Science Council of R.O.C. under contract NSC 87-2215-E-008-012.
PY - 1999/5
Y1 - 1999/5
N2 - The characteristics of self-assembled In0.5Ga0.5As quantum dot p-i-n structures with In0.1Ga0.9As, GaAs, and In0.1Al0.9As matrices are investigated using electroluminescence (EL) and current-voltage (I-V) measurements. EL spectra indicate that the quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared with those in GaAs and In0.1Al0.9As matrices. The state filling effect is observed in the power dependent EL spectra for the In0.5Ga0.5As quantum dots in In0.1Ga0.9As and GaAs matrices. I-V characteristics show that carrier tunneling-recombination is the dominant process at low bias and low temperature region for the dots in In0.1Ga0.9As and GaAs matrices. Whereas, the quantum dots in In0.1Al0.9As matrix exhibit poor optical and electrical properties due to higher defect density.
AB - The characteristics of self-assembled In0.5Ga0.5As quantum dot p-i-n structures with In0.1Ga0.9As, GaAs, and In0.1Al0.9As matrices are investigated using electroluminescence (EL) and current-voltage (I-V) measurements. EL spectra indicate that the quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared with those in GaAs and In0.1Al0.9As matrices. The state filling effect is observed in the power dependent EL spectra for the In0.5Ga0.5As quantum dots in In0.1Ga0.9As and GaAs matrices. I-V characteristics show that carrier tunneling-recombination is the dominant process at low bias and low temperature region for the dots in In0.1Ga0.9As and GaAs matrices. Whereas, the quantum dots in In0.1Al0.9As matrix exhibit poor optical and electrical properties due to higher defect density.
UR - http://www.scopus.com/inward/record.url?scp=0032639424&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(99)00013-5
DO - 10.1016/S0022-0248(99)00013-5
M3 - 會議論文
AN - SCOPUS:0032639424
SN - 0022-0248
VL - 201
SP - 1168
EP - 1171
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)
Y2 - 31 August 1998 through 4 September 1998
ER -