Characterization of InAlAs/In0.25Ga0.75As 0.72Sb0.28/InGaAs double heterojunction bipolar transistors

Chao Min Chang, Shu Han Chen, Sheng Yu Wang, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We report on the characterization of InP-based heterojunction bipolar transistors (HBTs) with low turn-on voltage and high current gain by using InGaAsSb as the base layer. The low turn-on voltage of 0.43 V is attributed to the smaller band gap of the In0.25Ga0.75As 072Sb0.28 material. High current gain of 74 is observed despite a heavily Be-doped (9.0×1019 cm-3) base is used, suggesting a long minority carrier lifetime (τn) in the InGaAsSb material. Moreover, low specific contact resistivity of 5×10 -8 Ω-cm2 is also demonstrated on separate In 0.25Ga0.75As072Sb0.28 samples.

Original languageEnglish
Title of host publication2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
Pages309-311
Number of pages3
DOIs
StatePublished - 2010
Event22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
Duration: 31 May 20104 Jun 2010

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
Country/TerritoryJapan
CityKagawa
Period31/05/104/06/10

Fingerprint

Dive into the research topics of 'Characterization of InAlAs/In<sub>0.25</sub>Ga<sub>0.75</sub>As <sub>0.72</sub>Sb<sub>0.28</sub>/InGaAs double heterojunction bipolar transistors'. Together they form a unique fingerprint.

Cite this