A two-peak feature of stimulated emission (SE) from InGaN/GaN quantum well samples is described. Further, evidences of indium aggregation and phase separation from material analysis are reported.
|Number of pages||2|
|State||Published - 2000|
|Event||Conference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA|
Duration: 7 May 2000 → 12 May 2000
|Conference||Conference on Lasers and Electro-Optics (CLEO 2000)|
|City||San Francisco, CA, USA|
|Period||7/05/00 → 12/05/00|