Abstract
A two-peak feature of stimulated emission (SE) from InGaN/GaN quantum well samples is described. Further, evidences of indium aggregation and phase separation from material analysis are reported.
Original language | English |
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Pages | 244-245 |
Number of pages | 2 |
State | Published - 2000 |
Event | Conference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA Duration: 7 May 2000 → 12 May 2000 |
Conference
Conference | Conference on Lasers and Electro-Optics (CLEO 2000) |
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City | San Francisco, CA, USA |
Period | 7/05/00 → 12/05/00 |