Keyphrases
Absolute Value
20%
Applied Bias
20%
Capacitance-voltage Measurements
40%
Current-voltage
20%
Electrical Characteristics
20%
Epilayer
40%
Gallium Arsenide
100%
Generation-recombination
20%
Heterointerface
20%
Heterojunction Diode
40%
High Temperature
20%
I-V Characteristics
20%
Ideality Factor
20%
Lattice Mismatch
20%
Maximum Spreading
20%
Molecular Beam Epitaxy
100%
N-Si
100%
Order of Magnitude
20%
Prelayer
40%
Recombination Mechanism
20%
Si Heterojunction
100%
Si Substrate
40%
Si Surface
20%
Strong Dependence
20%
Surface Leakage Current
20%
Temperature-independent
20%
Material Science
Capacitance
40%
Current-Voltage Characteristic
20%
Electrical Property
20%
Epilayers
40%
Gallium Arsenide
100%
Heterojunction
100%
Lattice Mismatch
20%
Molecular Beam Epitaxy
100%
Surface (Surface Science)
40%
Engineering
Absolute Value
20%
Current-Voltage Characteristic
20%
Electrical Measurement
40%
Gallium Arsenide
100%
Heterojunctions
100%
Ideality Factor
20%
Lattice Mismatch
20%
Recombination Mechanism
20%
Si Substrate
40%
Si Surface
20%
Thin Layer
20%