Characteristics of In_0.3Ga_0.7As/in_0.29Al_0.71 As heterostructures grown on GaAs using inalas buffers

Keyphrases

• Gallium Arsenide 100%
• InAlAs 100%
• Heterostructure 100%
• Field-effect Transistors 50%
• GaAs Substrate 50%
• Epilayer 50%
• Misfit Dislocation 50%
• Electron Mobility 50%
• Strain Relaxed Buffer 50%
• Doped Structure 50%
• Cross-sectional Transmission Electron Microscopy 50%
• Metamorphic Buffer 50%
• Carrier Density 50%
• Modulation-doped 50%

Material Science

• Gallium Arsenide 100%
• Heterojunction 100%
• Field Effect Transistor 50%
• Transmission Electron Microscopy 50%
• Carrier Concentration 50%
• Epilayers 50%
• Buffer Layer 50%
• Dislocation (Crystal) 50%
• Electron Mobility 50%