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Characteristics of fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructures in doped-channel FETs
L. S. Lai, Y. J. Chan, J. W. Pan, J. I. Chyi
Research output: Contribution to journal › Article › peer-review
4
Scopus
citations