Characteristics of fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructures in doped-channel FETs

L. S. Lai, Y. J. Chan, J. W. Pan, J. I. Chyi

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Abstract

A fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructure was introduced into doped-channel FETs (fully-Q DCFETs) on InP substrates for the first time. Combining the advantages of high quality quaternary InAlGaAs Schottky and channel layers, the authors were able to enhance device gate-to-drain and channel breakdown voltages, and to eliminate the kink effect. This results in an extremely low output conductance (go = 0.6mS/mm), and a high DC gain ratio (gmgo ≃ 350).

Original languageEnglish
Pages (from-to)308-309
Number of pages2
JournalElectronics Letters
Volume34
Issue number3
DOIs
StatePublished - 5 Feb 1998

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