Characteristics of fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructures in doped-channel FETs

L. S. Lai; Y. J. Chan; J. W. Pan; J. I. Chyi

doi:10.1049/el:19980200

Characteristics of fully quaternary In_0.52(Al_0.8Ga_0.2)_0.48As/In _0.53(Al_0.2Ga_0.8)_0.47As heterostructures in doped-channel FETs

L. S. Lai, Y. J. Chan, J. W. Pan, J. I. Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A fully quaternary In_0.52(Al_0.8Ga_0.2)_0.48As/In _0.53(Al_0.2Ga_0.8)_0.47As heterostructure was introduced into doped-channel FETs (fully-Q DCFETs) on InP substrates for the first time. Combining the advantages of high quality quaternary InAlGaAs Schottky and channel layers, the authors were able to enhance device gate-to-drain and channel breakdown voltages, and to eliminate the kink effect. This results in an extremely low output conductance (g_o = 0.6mS/mm), and a high DC gain ratio (g_mg_o ≃ 350).

Original language	English
Pages (from-to)	308-309
Number of pages	2
Journal	Electronics Letters
Volume	34
Issue number	3
DOIs	https://doi.org/10.1049/el:19980200
State	Published - 5 Feb 1998

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@article{e05ed384c71045a9a9efe7a730b95cc2,

title = "Characteristics of fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructures in doped-channel FETs",

abstract = "A fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructure was introduced into doped-channel FETs (fully-Q DCFETs) on InP substrates for the first time. Combining the advantages of high quality quaternary InAlGaAs Schottky and channel layers, the authors were able to enhance device gate-to-drain and channel breakdown voltages, and to eliminate the kink effect. This results in an extremely low output conductance (go = 0.6mS/mm), and a high DC gain ratio (gmgo ≃ 350).",

author = "Lai, {L. S.} and Chan, {Y. J.} and Pan, {J. W.} and Chyi, {J. I.}",

year = "1998",

month = feb,

day = "5",

doi = "10.1049/el:19980200",

language = "???core.languages.en_GB???",

volume = "34",

pages = "308--309",

journal = "Electronics Letters",

issn = "0013-5194",

number = "3",

}

TY - JOUR

T1 - Characteristics of fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructures in doped-channel FETs

AU - Lai, L. S.

AU - Chan, Y. J.

AU - Pan, J. W.

AU - Chyi, J. I.

PY - 1998/2/5

Y1 - 1998/2/5

N2 - A fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructure was introduced into doped-channel FETs (fully-Q DCFETs) on InP substrates for the first time. Combining the advantages of high quality quaternary InAlGaAs Schottky and channel layers, the authors were able to enhance device gate-to-drain and channel breakdown voltages, and to eliminate the kink effect. This results in an extremely low output conductance (go = 0.6mS/mm), and a high DC gain ratio (gmgo ≃ 350).

AB - A fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructure was introduced into doped-channel FETs (fully-Q DCFETs) on InP substrates for the first time. Combining the advantages of high quality quaternary InAlGaAs Schottky and channel layers, the authors were able to enhance device gate-to-drain and channel breakdown voltages, and to eliminate the kink effect. This results in an extremely low output conductance (go = 0.6mS/mm), and a high DC gain ratio (gmgo ≃ 350).

UR - http://www.scopus.com/inward/record.url?scp=0032484865&partnerID=8YFLogxK

U2 - 10.1049/el:19980200

DO - 10.1049/el:19980200

M3 - 期刊論文

AN - SCOPUS:0032484865

SN - 0013-5194

VL - 34

SP - 308

EP - 309

JO - Electronics Letters

JF - Electronics Letters

IS - 3

ER -

Characteristics of fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructures in doped-channel FETs

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Characteristics of fully quaternary In_0.52(Al_0.8Ga_0.2)_0.48As/In _0.53(Al_0.2Ga_0.8)_0.47As heterostructures in doped-channel FETs