Characteristics of Charge Persistence in InGaAs/InP Single-Photon Avalanche Diode

Yi Shan Lee, Kuan Yu Chen, Sheng Yu Chien, Shih Cheng Chang

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


We present an experimental study of charge persistence effect in InGaAs/InP single-photon avalanche diodes based on their dark and illuminated characteristics. It is well known that the sources of dark carriers mainly originate from thermal generation, trap-Assisted tunneling, and afterpulsing, where these mechanisms are dominant in the dark count rate performance at different temperature ranges. In this letter, besides the above-mentioned mechanisms, we further address an additional mechanism involved that competes with suppression of thermal carriers when the temperature is decreased. A good correspondence is observed by comparing the dark characteristics with the illuminated characteristics, showing that the additional spurious signals occurred at intermediate temperature range originate from the charge persistence effect.

Original languageEnglish
Article number8482252
Pages (from-to)1980-1982
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number22
StatePublished - 15 Nov 2018


  • Single photon avalanche diodes (SPADs)
  • charge persistence
  • dark count rate (DCR)


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