Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions

Yung Chen Cheng; En Chiang Lin; Shih Wei Feng; Hsiang Chen Wang; C. C. Yang; Kung Jen Ma; Chang Chi Pan; Jen Inn Chyi

doi:10.1002/pssc.200303474

Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions

Yung Chen Cheng, En Chiang Lin, Shih Wei Feng, Hsiang Chen Wang, C. C. Yang, Kung Jen Ma, Chang Chi Pan, Jen Inn Chyi

Research output: Contribution to journal › Conference article › peer-review

Abstract

We compared the temperature dependent spectral variations of the amplified spontaneous emission (ASE) between InGaN/GaN quantum well samples of no doping, well doping, and barrier doping of silicon. The comparisons were particularly made between two series of samples with a low and a high indium content. The results show that a multi-peak ASE spectral feature and a low energy stimulated emission peak, existing at the photoluminescence shoulder, could be observed only in the high-indium-content, barrier-doped sample. Such results are supposed to originate from the formation of quantum dots of various sizes, concentrations, and shapes under the condition of barrier doping in the sample.

Original language	English
Pages (from-to)	2670-2673
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303474
State	Published - 2003
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 25 May 2003 → 30 May 2003

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@article{b18082a603c24987b83d157979b9dac8,

title = "Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions",

abstract = "We compared the temperature dependent spectral variations of the amplified spontaneous emission (ASE) between InGaN/GaN quantum well samples of no doping, well doping, and barrier doping of silicon. The comparisons were particularly made between two series of samples with a low and a high indium content. The results show that a multi-peak ASE spectral feature and a low energy stimulated emission peak, existing at the photoluminescence shoulder, could be observed only in the high-indium-content, barrier-doped sample. Such results are supposed to originate from the formation of quantum dots of various sizes, concentrations, and shapes under the condition of barrier doping in the sample.",

author = "Cheng, {Yung Chen} and Lin, {En Chiang} and Feng, {Shih Wei} and Wang, {Hsiang Chen} and Yang, {C. C.} and Ma, {Kung Jen} and Pan, {Chang Chi} and Chyi, {Jen Inn}",

year = "2003",

doi = "10.1002/pssc.200303474",

language = "???core.languages.en_GB???",

pages = "2670--2673",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

number = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

}

TY - JOUR

T1 - Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions

AU - Cheng, Yung Chen

AU - Lin, En Chiang

AU - Feng, Shih Wei

AU - Wang, Hsiang Chen

AU - Yang, C. C.

AU - Ma, Kung Jen

AU - Pan, Chang Chi

AU - Chyi, Jen Inn

PY - 2003

Y1 - 2003

N2 - We compared the temperature dependent spectral variations of the amplified spontaneous emission (ASE) between InGaN/GaN quantum well samples of no doping, well doping, and barrier doping of silicon. The comparisons were particularly made between two series of samples with a low and a high indium content. The results show that a multi-peak ASE spectral feature and a low energy stimulated emission peak, existing at the photoluminescence shoulder, could be observed only in the high-indium-content, barrier-doped sample. Such results are supposed to originate from the formation of quantum dots of various sizes, concentrations, and shapes under the condition of barrier doping in the sample.

AB - We compared the temperature dependent spectral variations of the amplified spontaneous emission (ASE) between InGaN/GaN quantum well samples of no doping, well doping, and barrier doping of silicon. The comparisons were particularly made between two series of samples with a low and a high indium content. The results show that a multi-peak ASE spectral feature and a low energy stimulated emission peak, existing at the photoluminescence shoulder, could be observed only in the high-indium-content, barrier-doped sample. Such results are supposed to originate from the formation of quantum dots of various sizes, concentrations, and shapes under the condition of barrier doping in the sample.

UR - http://www.scopus.com/inward/record.url?scp=84875096958&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303474

DO - 10.1002/pssc.200303474

M3 - 會議論文

AN - SCOPUS:84875096958

SN - 1610-1634

SP - 2670

EP - 2673

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -

Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions

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