Characteristics of a in0.52(AlxGa1-x)0.48As/In 0.53Ga0.47As(0 ≤ x ≤ 1) heterojunction and its application on HEMT's

Yi Jen Chan, Chia Song Wu, Chun Hung Chen, Jia Lin Shieh, Jen Inn Chyi

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3 Scopus citations

Abstract

The quaternary In0.52(AlxGa1-x)0.48As compound on InP substrates is an important material for use in optoelectronic and microwave devices. We have systematically investigated the electrical properties of quaternary In0.52(AlxGa1-x)0.48As layers, and found that a 10% addition of Ga atoms into the InAlAs layer improves the Schottky diode performance. The energy bandgap (Eg) for the In0.52(AlxGa1-x)0.48As layer was (0.806 + 0.711x) eV, and the associated conduction-band discontinuity (ΔEc), in the InAlGaAs/In0.53Ga0.47As heterojunction, was around (0.68 ± 0.01)ΔEg. Using this high quality In0.52(Al0.9Ga0.1)0.48As layer in the Schottky and buffer layers, we obtained quaternary In0.52(Al0.9Ga0.1)0.48As/In 0.53Ga0.47As HEMT's. This quaternary HEMT revealed excellent dc and microwave characteristics. In comparison with the conventional InAlAs/InGaAs HEMT's, quaternary HEMT's demonstrated improved sidegating and device reliability.

Original languageEnglish
Pages (from-to)708-714
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume44
Issue number5
DOIs
StatePublished - 1997

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