Ceramic-based thin-film blue LEDs with high operation voltage and unsaturated output power at 1800W/cm2

Meng Lun Tsai; Kun Yu Lai

doi:10.7567/APEX.7.022103

Ceramic-based thin-film blue LEDs with high operation voltage and unsaturated output power at 1800W/cm²

Meng Lun Tsai
, Kun Yu Lai

Department of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

III-nitride blue (λ = 450 nm) LEDs were fabricated on ceramic substrates using thin-film and high-voltage processes. The device, comprising sixteen cascaded sub-LEDs, exhibits excellent current spreading and thermal resilience. Under the driving power of 1800W/cm² (J = 450 A/cm ²), the high-voltage thin-film LED delivers unsaturated output power and alleviated efficiency droop, which is not achievable with devices fabricated on Si or sapphire substrates with identical epitaxial structure.

Original language	English
Article number	022103
Journal	Applied Physics Express
Volume	7
Issue number	2
DOIs	https://doi.org/10.7567/APEX.7.022103
State	Published - Feb 2014

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abstract = "III-nitride blue (λ = 450 nm) LEDs were fabricated on ceramic substrates using thin-film and high-voltage processes. The device, comprising sixteen cascaded sub-LEDs, exhibits excellent current spreading and thermal resilience. Under the driving power of 1800W/cm2 (J = 450 A/cm 2), the high-voltage thin-film LED delivers unsaturated output power and alleviated efficiency droop, which is not achievable with devices fabricated on Si or sapphire substrates with identical epitaxial structure.",

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N2 - III-nitride blue (λ = 450 nm) LEDs were fabricated on ceramic substrates using thin-film and high-voltage processes. The device, comprising sixteen cascaded sub-LEDs, exhibits excellent current spreading and thermal resilience. Under the driving power of 1800W/cm2 (J = 450 A/cm 2), the high-voltage thin-film LED delivers unsaturated output power and alleviated efficiency droop, which is not achievable with devices fabricated on Si or sapphire substrates with identical epitaxial structure.

AB - III-nitride blue (λ = 450 nm) LEDs were fabricated on ceramic substrates using thin-film and high-voltage processes. The device, comprising sixteen cascaded sub-LEDs, exhibits excellent current spreading and thermal resilience. Under the driving power of 1800W/cm2 (J = 450 A/cm 2), the high-voltage thin-film LED delivers unsaturated output power and alleviated efficiency droop, which is not achievable with devices fabricated on Si or sapphire substrates with identical epitaxial structure.

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Ceramic-based thin-film blue LEDs with high operation voltage and unsaturated output power at 1800W/cm2

Abstract

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Ceramic-based thin-film blue LEDs with high operation voltage and unsaturated output power at 1800W/cm²