Abstract
III-nitride blue (λ = 450 nm) LEDs were fabricated on ceramic substrates using thin-film and high-voltage processes. The device, comprising sixteen cascaded sub-LEDs, exhibits excellent current spreading and thermal resilience. Under the driving power of 1800W/cm2 (J = 450 A/cm 2), the high-voltage thin-film LED delivers unsaturated output power and alleviated efficiency droop, which is not achievable with devices fabricated on Si or sapphire substrates with identical epitaxial structure.
Original language | English |
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Article number | 022103 |
Journal | Applied Physics Express |
Volume | 7 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2014 |