Keyphrases
Indium Gallium Nitride (InGaN)
100%
Light-emitting Diodes
100%
Carrier Transport
100%
Quantum Efficiency
100%
Transport Studies
100%
Quantum Time
100%
Luminescence Measurements
100%
Time-resolved Electroluminescence
100%
Efficiency Droop
50%
Response Time
50%
Defect Density
50%
Time-to-treatment
50%
Carrier Recombination
50%
Carrier Injection
50%
V-shaped Defect
50%
Active Regions
25%
Spectral Width
25%
Peak Position
25%
Applied Voltage
25%
Device Performance
25%
Quantum Well
25%
Decay Time
25%
Blue Shift
25%
V-shaped
25%
Green Light-emitting Diodes
25%
Carrier Localization
25%
Polarization Field
25%
Device Characteristics
25%
Indium Composition
25%
Luminescence Efficiency
25%
Narrow Spectrum
25%
Transport Characteristics
25%
Recombination Dynamics
25%
Short Response Time
25%
Non-radiative Decay
25%
Carrier Delocalization
25%
Auger Recombination
25%
Radiative Decay Rate
25%
Engineering
Quantum Efficiency
100%
Light-Emitting Diode
100%
Luminaires
100%
Response Time
60%
Efficiency Droop
40%
Defect Density
40%
Quantum Well
20%
Applied Voltage
20%
Decay Time
20%
Active Region
20%
Polarization Field
20%
Auger Recombination
20%
Narrow Spectrum Width
20%
Material Science
Light-Emitting Diode
100%
Carrier Transport
100%
Electroluminescence
100%
Defect Density
40%
Density
20%
Indium
20%
Quantum Well
20%
Luminescence
20%