Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence

Shih Wei Feng; C. C. Pan; Jen Inn Chyi; Chien Nan Kuo; Kuei Hsien Chen

doi:10.1002/pssc.200674825

Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence

Shih Wei Feng, C. C. Pan, Jen Inn Chyi, Chien Nan Kuo, Kuei Hsien Chen

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Carrier transport of dichromatic InGaN-based LEDs with AlGaN spacer bandgap dependence has been studied. TREL measurements show that carrier dynamics could be well explained by the combined effects of carrier effective mass, carrier mobility, quantum confinement, and device structures. The experimental results provide important information for device designs.

Original language	English
Pages (from-to)	2716-2719
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200674825
State	Published - 2007
Event	International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 22 Oct 2006 → 27 Oct 2006

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abstract = "Carrier transport of dichromatic InGaN-based LEDs with AlGaN spacer bandgap dependence has been studied. TREL measurements show that carrier dynamics could be well explained by the combined effects of carrier effective mass, carrier mobility, quantum confinement, and device structures. The experimental results provide important information for device designs.",

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AU - Pan, C. C.

AU - Chyi, Jen Inn

AU - Kuo, Chien Nan

AU - Chen, Kuei Hsien

PY - 2007

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AB - Carrier transport of dichromatic InGaN-based LEDs with AlGaN spacer bandgap dependence has been studied. TREL measurements show that carrier dynamics could be well explained by the combined effects of carrier effective mass, carrier mobility, quantum confinement, and device structures. The experimental results provide important information for device designs.

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M3 - 會議論文

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EP - 2719

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

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T2 - International Workshop on Nitride Semiconductors, IWN 2006

Y2 - 22 October 2006 through 27 October 2006

ER -

Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence

Abstract

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