Carrier dynamics in InGaN/GaN multiple quantum well structures

Shih Wei Feng, Yung Chen Cheng, Yi Yin Chung, Ming Hua Mao, Chih Chung Yang, Yen Sheng Lin, Kung Jeng Ma, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We report the fast and slow decay lifetimes of multi-component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature. The fast decay component was essentially due to carrier dynamics, that is, carrier flow between strongly localized and weakly localized states. Such a carrier relaxation process results in extremely long PL decay time (up to almost 300 ns) for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape from strongly localized states, effective lifetimes becomes shorter.

Original languageEnglish
Pages (from-to)197-200
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 2001


  • Carrier dynamics
  • Carrier lifetime
  • InGaN/GaN quantum well
  • Localized states


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