Carbon re-incorporation in phosphorus-doped Si1- yCy epitaxial layers during thermal annealing

Hung Tai Chang; I. Ping Lin; Sheng Chen Twan; Wei Yen Woon; Sheng Wei Lee

doi:10.1016/j.jallcom.2012.10.158

Carbon re-incorporation in phosphorus-doped Si_1- _yC_y epitaxial layers during thermal annealing

Hung Tai Chang, I. Ping Lin, Sheng Chen Twan, Wei Yen Woon, Sheng Wei Lee

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The carbon-incorporation behavior in phosphorous-doped Si_1- _yC_y/Si (y₁ ∼ 0.018, y₂ ∼ 0.024) epilayers grown by reduced pressure chemical vapor deposition (RPCVD) has been investigated as a function of annealing temperatures. An abnormal interstitial carbon (C_i) re-incorporation was observed in the initial stage of thermal annealing, introducing an additional tensile strain into the Si_1-yC_y epilayers. At higher temperature but below β-SiC precipitation threshold, almost complete strain relaxation was found. These strain transitions can be attributed to the competitive behavior between C_i re-incorporation and phosphorus deactivation to kick out the substitutional carbon (C_sub) atoms during the post-annealing process. This work demonstrated that Si_1-yC_y epilayers grown by RPCVD could keep both enhanced carbon incorporation and nonequilibrium phosphorus activation if the thermal budget is well controlled.

Original language	English
Pages (from-to)	30-34
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	553
DOIs	https://doi.org/10.1016/j.jallcom.2012.10.158
State	Published - 15 Mar 2013

Keywords

Chemical vapor deposition
Epitaxy
Strain relaxation
Thermal stability
Transmission electron microscopy

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10.1016/j.jallcom.2012.10.158

Cite this

@article{c50a0fc7fe2c44ddb3a8dc83a1d7ce92,

title = "Carbon re-incorporation in phosphorus-doped Si1- yCy epitaxial layers during thermal annealing",

abstract = "The carbon-incorporation behavior in phosphorous-doped Si1- yCy/Si (y1 ∼ 0.018, y2 ∼ 0.024) epilayers grown by reduced pressure chemical vapor deposition (RPCVD) has been investigated as a function of annealing temperatures. An abnormal interstitial carbon (Ci) re-incorporation was observed in the initial stage of thermal annealing, introducing an additional tensile strain into the Si1-yCy epilayers. At higher temperature but below β-SiC precipitation threshold, almost complete strain relaxation was found. These strain transitions can be attributed to the competitive behavior between Ci re-incorporation and phosphorus deactivation to kick out the substitutional carbon (Csub) atoms during the post-annealing process. This work demonstrated that Si1-yCy epilayers grown by RPCVD could keep both enhanced carbon incorporation and nonequilibrium phosphorus activation if the thermal budget is well controlled.",

keywords = "Chemical vapor deposition, Epitaxy, Strain relaxation, Thermal stability, Transmission electron microscopy",

author = "Chang, \{Hung Tai\} and Lin, \{I. Ping\} and Twan, \{Sheng Chen\} and Woon, \{Wei Yen\} and Lee, \{Sheng Wei\}",

note = "Funding Information: The research is supported by National Nano Device Laboratories and National Science Council of Taiwan under Contract No. NSC 100-2221-E-008-016-MY3 . The authors also thank National Nano Device Laboratories and Center for Nano Science and Technology at National Central University for the facility support. ",

year = "2013",

month = mar,

day = "15",

doi = "10.1016/j.jallcom.2012.10.158",

language = "???core.languages.en\_GB???",

volume = "553",

pages = "30--34",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

}

TY - JOUR

T1 - Carbon re-incorporation in phosphorus-doped Si1- yCy epitaxial layers during thermal annealing

AU - Chang, Hung Tai

AU - Lin, I. Ping

AU - Twan, Sheng Chen

AU - Woon, Wei Yen

AU - Lee, Sheng Wei

N1 - Funding Information: The research is supported by National Nano Device Laboratories and National Science Council of Taiwan under Contract No. NSC 100-2221-E-008-016-MY3 . The authors also thank National Nano Device Laboratories and Center for Nano Science and Technology at National Central University for the facility support.

PY - 2013/3/15

Y1 - 2013/3/15

N2 - The carbon-incorporation behavior in phosphorous-doped Si1- yCy/Si (y1 ∼ 0.018, y2 ∼ 0.024) epilayers grown by reduced pressure chemical vapor deposition (RPCVD) has been investigated as a function of annealing temperatures. An abnormal interstitial carbon (Ci) re-incorporation was observed in the initial stage of thermal annealing, introducing an additional tensile strain into the Si1-yCy epilayers. At higher temperature but below β-SiC precipitation threshold, almost complete strain relaxation was found. These strain transitions can be attributed to the competitive behavior between Ci re-incorporation and phosphorus deactivation to kick out the substitutional carbon (Csub) atoms during the post-annealing process. This work demonstrated that Si1-yCy epilayers grown by RPCVD could keep both enhanced carbon incorporation and nonequilibrium phosphorus activation if the thermal budget is well controlled.

AB - The carbon-incorporation behavior in phosphorous-doped Si1- yCy/Si (y1 ∼ 0.018, y2 ∼ 0.024) epilayers grown by reduced pressure chemical vapor deposition (RPCVD) has been investigated as a function of annealing temperatures. An abnormal interstitial carbon (Ci) re-incorporation was observed in the initial stage of thermal annealing, introducing an additional tensile strain into the Si1-yCy epilayers. At higher temperature but below β-SiC precipitation threshold, almost complete strain relaxation was found. These strain transitions can be attributed to the competitive behavior between Ci re-incorporation and phosphorus deactivation to kick out the substitutional carbon (Csub) atoms during the post-annealing process. This work demonstrated that Si1-yCy epilayers grown by RPCVD could keep both enhanced carbon incorporation and nonequilibrium phosphorus activation if the thermal budget is well controlled.

KW - Chemical vapor deposition

KW - Epitaxy

KW - Strain relaxation

KW - Thermal stability

KW - Transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=84870155188&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2012.10.158

DO - 10.1016/j.jallcom.2012.10.158

M3 - 期刊論文

AN - SCOPUS:84870155188

SN - 0925-8388

VL - 553

SP - 30

EP - 34

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds