Abstract
Reflection-type binary phase-shift keying and in-phase and quadrature modulator monolithic microwave integrated circuits (MMICs) are reported in this paper. These MMICs are fabricated by 1-μm HBT process and evaluated successfully under vector signal characterization. A cold-mode HBT device model with varying bias conditions is proposed, which is suitable for millimeter-wave circuit design and simulation. The analysis and design equations of imbalance effects for the reflection-type modulators are also presented. These MMICs demonstrate measured error vector magnitude of less than 12%, a carrier rejection of better than 15 dB, and an adjacent channel power ratio of better than -21 dBc from 50 to 110 GHz.
Original language | English |
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Pages (from-to) | 908-919 |
Number of pages | 12 |
Journal | IEEE Transactions on Microwave Theory and Techniques |
Volume | 52 |
Issue number | 3 |
DOIs | |
State | Published - Mar 2004 |
Keywords
- Binary phase-shift keying (BPSK)
- Cold-mode HBT model
- HBT
- In-phase and quadrature (IQ)
- Millimeter wave
- Modulator
- Monolithic microwave integrated circuit (MMIC)