Bridged-shunt-series peaking technique for a 3.1-10.6 GHZ ultra-wideband CMOS low noise amplifier

Yu Liang Lin, Hsien Yuan Liao, Hwann Kaeo Chiou

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

An ultra-wideband 3.1-10.6-GHz low noise amplifier (LNA) adopting inductive peaking technique for bandwidth extension is presented. Fabricated in a 0.18-p.m CMOS process, the proposed circuit can both satisfy the maximum bandwidth and the maximally flat response. The feedback resistor provides good input match while contributing a small amount in noise figure degradation. The presented LNA achieves a maximum power gain of 14.1 dB within a 3-dB bandwidth from 2.2 to 11 GHz and a good noise figure from 3.4 to 4.5 dB in the entire UWB band, and an IIP3 better than - 3 dBm while drawing 30 mW from a 1.5-V supply.

Original languageEnglish
Pages (from-to)575-578
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume50
Issue number3
DOIs
StatePublished - Mar 2008

Keywords

  • CMOS
  • Inductive peaking
  • Low noise amplifier
  • UWB
  • Wideband

Fingerprint

Dive into the research topics of 'Bridged-shunt-series peaking technique for a 3.1-10.6 GHZ ultra-wideband CMOS low noise amplifier'. Together they form a unique fingerprint.

Cite this