Abstract
An ultra-wideband 3.1-10.6-GHz low noise amplifier (LNA) adopting inductive peaking technique for bandwidth extension is presented. Fabricated in a 0.18-p.m CMOS process, the proposed circuit can both satisfy the maximum bandwidth and the maximally flat response. The feedback resistor provides good input match while contributing a small amount in noise figure degradation. The presented LNA achieves a maximum power gain of 14.1 dB within a 3-dB bandwidth from 2.2 to 11 GHz and a good noise figure from 3.4 to 4.5 dB in the entire UWB band, and an IIP3 better than - 3 dBm while drawing 30 mW from a 1.5-V supply.
Original language | English |
---|---|
Pages (from-to) | 575-578 |
Number of pages | 4 |
Journal | Microwave and Optical Technology Letters |
Volume | 50 |
Issue number | 3 |
DOIs | |
State | Published - Mar 2008 |
Keywords
- CMOS
- Inductive peaking
- Low noise amplifier
- UWB
- Wideband