Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers

J. W. Johnson, A. P. Zhang, Wen Ben Luo, Fan Ren, Stephen J. Pearton, S. S. Park, Y. J. Park, Jenn Inn Chyi

Research output: Contribution to journalArticlepeer-review

90 Scopus citations

Abstract

Schottky rectifiers with implanted p + guard ring edge termination fabricated on free-standing GaN substrates show reverse breakdown voltages up to 160 V in vertical geometry devices. The specific on-state resistance was in the range 1.7-3.0 Ω·cm 2, while the turn-on voltage was ∼1.8 V. The switching performance was analyzed using the reverse recovery current transient waveform, producing an approximate high-injection, level hole lifetime of ∼15 ns. The bulk GaN rectifiers show significant improvement in forward current density and on-state resistance over previous heteroepitaxial devices.

Original languageEnglish
Pages (from-to)32-36
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume49
Issue number1
DOIs
StatePublished - Jan 2002

Keywords

  • Edge termination
  • GaN
  • Power electronics
  • Rectifiers
  • Reverse recovery

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