@article{7aebb9df48e64488aacdd67503d2194f,
title = "Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers",
abstract = "Schottky rectifiers with implanted p + guard ring edge termination fabricated on free-standing GaN substrates show reverse breakdown voltages up to 160 V in vertical geometry devices. The specific on-state resistance was in the range 1.7-3.0 Ω·cm 2, while the turn-on voltage was ∼1.8 V. The switching performance was analyzed using the reverse recovery current transient waveform, producing an approximate high-injection, level hole lifetime of ∼15 ns. The bulk GaN rectifiers show significant improvement in forward current density and on-state resistance over previous heteroepitaxial devices.",
keywords = "Edge termination, GaN, Power electronics, Rectifiers, Reverse recovery",
author = "Johnson, {J. W.} and Zhang, {A. P.} and Luo, {Wen Ben} and Fan Ren and Pearton, {Stephen J.} and Park, {S. S.} and Park, {Y. J.} and Chyi, {Jenn Inn}",
note = "Funding Information: Manuscript received June 19, 2001; revised September 27, 2001. The work at the University of Florida, Gainsville, FL, was supported in part by DARPA/EPRI, monitored by ONR, and by NSF Grants DMR-0101438 and CTS-991173. The review of this paper was arranged by Editor K. M. Lau. J. W. Johnson, A. P. Zhang, W.-B. Luo, and F. Ren are with the Department of Chemical Engineering, University of Florida, Gainesville, FL 32611 USA. S. J. Pearton is with the Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 USA (e-mail:
[email protected]). S. S. Park and Y. J. Park are with the Samsung Advanced Institute of Technology, Suwon 440-600, South Korea. J.-I. Chyi is with the Department of Chemical Engineering, National Central University, Chung-Li 32054, Taiwan. Publisher Item Identifier S 0018-9383(02)00238-1.",
year = "2002",
month = jan,
doi = "10.1109/16.974745",
language = "???core.languages.en_GB???",
volume = "49",
pages = "32--36",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
number = "1",
}