Breakdown Behavior of GaAs/AlGaAs HBT's

James J. Chen, Jen Inn Chyi, Hadis Morkoc, Guang Bo Gao

Research output: Contribution to journalArticlepeer-review

48 Scopus citations


Avalanche breakdown behavior at the collector junction of the GaAs/AlGaAs heterojunction bipolar transistor (HBT) has been studied. Junction breakdown characteristics displaying hard break-down, soft breakdown, and negative resistance breakdown behavior were observed and are interpreted by analysis of localized micro-plasma effects, uniform microplasma-free behavior, and associated current gain measurements. Light emission from the collector-base junction of the GaAs/AlGaAs HBT was observed and was used to investigate breakdown uniformity. Using a simple punchthrough break-down model, the theoretical breakdown curves at different collector doping concentrations and thicknesses were computed and found to be in agreement with maximum breakdown voltages measured from de-vices displaying the most uniform junction breakdown.

Original languageEnglish
Pages (from-to)2165-2172
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number10
StatePublished - Oct 1989


Dive into the research topics of 'Breakdown Behavior of GaAs/AlGaAs HBT's'. Together they form a unique fingerprint.

Cite this