Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Jui Wei Hus, Chien Chia Chen, Ming Jui Lee, Hsueh Hsing Liu, Jen Inn Chyi, Michael R.S. Huang, Chuan Pu Liu, Tzu Chiao Wei, Jr Hau He, Kun Yu Lai

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

Original languageEnglish
Pages (from-to)4845-4850
Number of pages6
JournalAdvanced Materials
Issue number33
StatePublished - 1 Sep 2015


  • GaN
  • Si substrate
  • nano-heteroepitaxy
  • quantum well
  • semipolar


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